Download TO-252-2L Plastic-Encapsulate Transistors 2SD1760

Survey
yes no Was this document useful for you?
   Thank you for your participation!

* Your assessment is very important for improving the work of artificial intelligence, which forms the content of this project

page
1
page
2
Document related concepts
no text concepts found
Transcript 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate Transistors
2SD1760
TRANSISTOR (NPN)
TO-252-2L
FEATURES
z
Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A)
z
Complements the 2SB1184.
1. BASE
2. COLLECTOR
MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)
Symbol
Parameter
Value
3. EMITTER
Unit
BDTIC
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
3
A
PC
Collector Power Dissipation
1.5
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55 to +150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=50μA, IE=0
60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA, IB=0
50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=50μA, IC=0
5
V
Collector cut-off current
ICBO
VCB=40V, IE=0
1
μA
Emitter cut-off current
IEBO
VEB=4V, IC=0
1
μA
DC current gain
hFE(1)
VCE=3V, IC=500mA
VCE(sat)
Collector-emitter saturation voltage
fT
Transition frequency
Cob
Collector output capacitance
CLASSIFICATION OF
Rank
Range
82
390
IC=2A, IB=200mA
1
V
VCE=5V, IC=500mA,f=30MHz
90
MHz
VCB=10V, IE=0, f=1MHz
40
pF
hFE(1)
P
Q
R
82-180
120-270
180-390
Marking
www.BDTIC.com/jcst
Typical Characteristics
2SD1760
Static Characteristic
COMMON
EMITTER
Ta=25℃
IC
0.8
5.6mA
hFE
6.3mA
4.9mA
DC CURRENT GAIN
IC
——
COMMON EMITTER
VCE= 3V
7.0mA
(A)
1.0
COLLECTOR CURRENT
hFE
1000
1.2
4.2mA
0.6
3.5mA
2.8mA
0.4
2.1mA
Ta=100℃
Ta=25℃
100
1.4mA
0.2
IB=0.7mA
0.0
10
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE
VBEsat ——
1200
0.4
6
VCE (V)
1
10
100
COLLECTOR CURRENT
VCEsat
IC
——
1000
IC
3000
(mA)
IC
1000
BDTIC
β=10
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
β=10
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
1000
800
600
Ta=25℃
Ta=100 ℃
400
T a=
0℃
10
5℃
=2
Ta
10
1
200
0.1
1
10
100
COLLECTOR CURREMT
IC
3000
——
IC
1000
1
3000
(mA)
10
100
1000
COLLECTOR CURRENT
Cob/Cib
VBE
——
IC
3000
(mA)
VCB/VEB
1000
COMMON EMITTER
VCE=3V
1000
f=1MHz
IE=0/IC=0
Ta=25 ℃
(pF)
(mA)
100
Cib
CAPACITANCE
10
T=
a 25
℃
T=
a 10
0℃
COLLECTOR CURRENT
C
IC
100
Cob
1
0.1
0
200
400
600
800
1000
1200
BASE-EMMITER VOLTAGE VBE (mV)
PC
2.0
COLLECTOR POWER DISSIPATION
PC (W)
100
——
10
0.1
1
REVERSE VOLTAGE
Ta
1.5
1.0
0.5
0.0
0
25
50
www.BDTIC.com/jcst
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
10
V
(V)
30
Related documents