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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Transistors
2SD1271A
TO – 220F
TRANSISTOR (NPN)
1. BASE
FEATURES
z Low Collector to Emitter Saturation Voltage VCE(sat)
z Satisfactory Linearity of Forward Current Transfer Ratio hFE
z Large Collector Current
2. COLLECTOR
3. EMITTER
BDTIC
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
V
VCBO
Collector-Base Voltage
150
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current
7
A
PC
Collector Power Dissipation
2
W
Thermal Resistance From Junction To Ambient
62.5
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=100µA,IE=0
150
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=10mA,IB=0
100
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100µA,IC=0
7
Collector cut-off current
ICBO
VCB=100V,IE=0
10
μA
Emitter cut-off current
IEBO
VEB=5V,IC=0
50
μA
hFE(1)
VCE=2V, IC=0.1A
45
hFE(2)
VCE=2V, IC=3A
60
DC current gain
V
260
Collector-emitter saturation voltage
VCE(sat)
IC=5A,IB=250mA
0.5
V
Base-emitter saturation voltage
VBE (sat)
IC=5A,IB=250mA
1.5
V
fT
Transition frequency
VCE=10V,IC=0.5A, f=10MHz
30
MHz
CLASSIFICATION OF hFE (2)
RANK
R
Q
P
RANGE
60-120
90-180
130-260
www.BDTIC.com/jcst
Typical Characterisitics
Static Characteristic
1.0
——
IC
COMMON EMITTER
VCE=2V
Ta=100℃
hFE
120
8mA
DC CURRENT GAIN
COLLECTOR CURRENT
COMMON
EMITTER
Ta=25℃
9mA
0.8
hFE
150
10mA
IC
(A)
1.2
2SD1271A
7mA
6mA
0.6
5mA
4mA
0.4
Ta=25℃
90
60
3mA
0.2
30
2mA
IB=1mA
0
0.01
0.0
0
1
2
3
COLLECTOR-EMITTER VOLTAGE
VCEsat
600
——
VCE
4
0.1
0.03
IC
VBEsat
1.2
3
1
0.3
COLLECTOR CURRENT
(V)
IC
10
(A)
IC
——
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BDTIC
300
100
Ta=100℃
Ta=25℃
30
Ta=25℃
0.8
Ta=100℃
0.4
β=20
10
0.01
0.03
0.3
0.1
COLLECTOR CURRENT
IC
10
3
1
IC
β=20
0.0
0.01
10
0.1
0.03
(A)
1
0.3
COLLECTOR CURRENT
—— VBE
Cob
300
——
10
3
IC
(A)
VCB
f=1MHz
IE=0
Ta=25℃
3
(pF)
Ta=100℃
200
Cob
1
0.3
CAPACITANCE
COLLECTOR CURRENT
IC
(A)
COMMON EMITTER
VCE=2V
Ta=25℃
0.1
Cob
100
0.03
0.01
0.2
0.4
0.6
0.8
1.0
0
0.1
1.2
fT
100
1
0.3
—— IC
PC
2.5
10
3
REVERSE VOLTAGE
BASE-EMMITER VOLTAGE VBE (V)
——
V
20
(V)
Ta
VCE=10V
COLLECTOR POWER DISSIPATION
PC (W)
TRANSITION FREQUENCY
fT
(MHz)
Ta=25℃
10
1
0.01
2.0
1.5
1.0
0.5
0.0
0.1
www.BDTIC.com/jcst
COLLECTOR CURRENT
1
IC
10
(A)
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
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