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Transcript 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO-92
2SD1468
TRANSISTOR (NPN)
1. EMITTER
FEATURES
z
Low saturation voltage
z
Ideal for low voltage, high current dribes
z
High DC current gain and high current
2.COLLECTOR
3. BASE
BDTIC
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Value
Unit
Collector-Base Voltage
30
V
VCEO
Collector-Emitter Voltage
15
V
VEBO
Emitter-Base Voltage
Collector Current -Continuous
5
V
1
A
Collector power dissipation
625
W
Junction Temperature
150
Storage Temperature
-55-150
℃
VCBO
IC
PC
Tj
Tstg
Parameter
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=50μA, IE=0
30
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA, IB=0
15
V
Emitter-base breakdown voltage
V(BR)EBO
IE=50μA, IC=0
5
V
Collector cut-off current
ICBO
VCB=20V, IE=0
0.5
μA
Emitter cut-off current
IEBO
VEB=4V, IC=0
0.5
μA
DC current gain
hFE
VCE=3V, IC=100mA
VCE(sat)
Collector-emitter saturation voltage
fT
Transition frequency
Cob
Collector output capacitance
CLASSIFICATION OF
Rank
Range
120
560
IC=500mA, IB=50mA
0.4
VCE=5V, IC=50mA, f=100MHz
50
MHz
VCB=10V, IE=0, f=1MHz
30
hFE
Q
R
S
120-270
180-390
270-560
www.BDTIC.com/jcst
V
pF
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