Download TO-3P Plastic-Encapsulate Transistors 2SD1037

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-3P Plastic-Encapsulate Transistors
TO-3P
2SD1037
TRANSISTOR (NPN)
1.BASE
FEATURES
z High Breakdown Voltage
z High Speed Switching
2.COLLECTOR
3.EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
BDTIC
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current
30
A
PC
Collector Power Dissipation
3.5
W
Thermal Resistance From Junction To Ambient
35.7
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
V(BR)CBO
*
Test
conditions
Typ
Max
Unit
IC=5mA,IE=0
150
V
IC=50mA,IB=0
120
V
6
V
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
IE=5mA,IC=0
ICBO
VCB=80V,IE=0
Emitter cut-off current
IEBO
VEB=6V,IC=0
DC current gain
hFE(1)
VCE=4V, IC=10A
Collector cut-off current
Min
5
uA
5
uA
20
Collector-emitter saturation voltage
VCE(sat)
IC=10A,IB=1A
0.5
V
Base-emitter saturation voltage
VBE (sat)
IC=10A,IB=1A
1.5
V
fT
VCE=4V,IC=1A
1.5
MHz
VCB=10V,IE=0, f=1MHz
210
pF
Transition frequency
Collector output capacitance
Cob
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
A,Feb,2012
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