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Transcript 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92MOD Plastic-Encapsulate Transistors
2SD1247
TO – 92M
TO – 92MOD
TRANSISTOR (NPN)
1. COLLECTOR
1. EMITTER
2. BASE
FEATURES
z Low Saturation Voltage
z Large Current Capacity and Wide ASO
2. COLLECTOR
3. EMITTER
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Value
Unit
VCBO
Collector-Base Voltage
Parameter
30
V
VCEO
Collector-Emitter Voltage
25
V
VEBO
Emitter-Base Voltage
6
V
2.5
A
1
W
Thermal Resistance From Junction To Ambient
125
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
BDTIC
IC
Collector Current
PC
Collector Power Dissipation
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= 100µA,IE=0
30
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA,IB=0
25
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100µA,IC=0
6
V
Collector cut-off current
ICBO
VCB=20V,IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=4V,IC=0
0.1
μA
hFE(1)
VCE=2V, IC=100mA
100
hFE(2)
VCE=2V, IC=1.5A
65
Collector-emitter saturation voltage
VCE(sat)
IC=1.5A,IB=75mA
0.4
V
Collector-emitter saturation voltage
VBE(sat)
IC=1.5A,IB=75mA
1.2
V
DC current gain
Cob
Collector output capacitance
fT
Transition frequency
V
560
VCB=10V,IE=0, f=1MHz
19
pF
VCE=10V,IC=50mA
150
MHz
CLASSIFICATION OF hFE
RANK
R
S
T
U
RANGE
100-200
140-280
200-400
280-560
A,Dec,2010
www.BDTIC.com/jcst
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