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Transcript 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-3P Plastic-Encapsulate Transistors
2SC5287
TO – 3P
TRANSISTOR (NPN)
1. BASE
FEATURES
z High Breakdown Voltage
z High Speed Switching
2. COLLECTOR
3. EMITTER
APPLICATIONS
z For Switching Regulator and General Purpose Applications
BDTIC
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
900
V
VCEO
Collector-Emitter Voltage
550
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current
5
A
PC
Collector Power Dissipation
TC=25℃
80
W
Thermal Resistance From Junction To Ambient
42
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
V(BR)CBO
*
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
Test
conditions
Min
Typ
Max
Unit
IC=1mA,IE=0
900
V
IC=10mA,IB=0
550
V
IE=1mA,IC=0
7
V
Collector cut-off current
ICBO
VCB=800V,IE=0
100
μA
Emitter cut-off current
IEBO
VEB=7V,IC=0
100
μA
hFE
DC current gain
*
VCE=4V, IC=1.8A
10
25
Collector-emitter saturation voltage
*
VCE(sat)
IC=1.8A,IB=0.36A
0.5
V
Base-emitter saturation voltage
*
VBE (sat)
IC=1.8A,IB=0.36A
1.2
V
Collector output capacitance
Transition frequency
Cob
fT
VCB=10V,IE=0, f=1MHz
50
pF
VCE=12V,IC=0.35A
6
MHz
*Pulse test
A,Dec,2010
www.BDTIC.com/jcst
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