Download TO-92 Plastic-Encapsulate Transistors 2SC5345

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
2SC5345
TRANSISTOR (NPN)
1. EMITTER
FEATURES
z High Current Transition Frequency
z Low Output Capacitance
z Low Base Time Constant and High Gain
z Excellent Noise Response
2. COLLECTOR
3. BASE
BDTIC
APPLICATIONS
z RF Amplifier
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Value
Unit
VCBO
Collector-Base Voltage
Parameter
30
V
VCEO
Collector-Emitter Voltage
20
V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current
20
mA
PC
Collector Power Dissipation
625
mW
Thermal Resistance From Junction To Ambient
200
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= 0.01mA,IE=0
30
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=5mA,IB=0
20
V
Emitter-base breakdown voltage
V(BR)EBO
IE=0.01mA,IC=0
4
V
Collector cut-off current
ICBO
VCB=30V,IE=0
0.5
μA
Emitter cut-off current
IEBO
VEB=4V,IC=0
0.5
μA
DC current gain
hFE(1)
VCE=6V, IC=1mA
VCE(sat)
IC=10mA,IB=1mA
Collector-emitter saturation voltage
Cob
Collector output capacitance
fT
Transition frequency
40
240
0.3
V
VCB=6V,IE=0, f=1MHz
1.4
pF
VCE=6V,IC=1mA
550
MHz
CLASSIFICATION OF hFE
RANK
R
O
Y
RANGE
40-80
70-140
120-240
www.BDTIC.com/jcst
Typical Characteristics
2SC5345
Static Characteristic
COMMON
EMITTER
Ta=25℃
18uA
hFE
2.0
IC
——
IC
20uA
16uA
DC CURRENT GAIN
(mA)
2.5
COLLECTOR CURRENT
hFE
1000
3.0
14uA
1.5
12uA
10uA
1.0
8uA
Ta=100℃
100
Ta=25℃
6uA
0.5
4uA
COMMON EMITTER
VCE= 6V
IB=2uA
0.0
0
2
4
6
8
COLLECTOR-EMITTER VOLTAGE
VBEsat ——
1000
10
0.1
10
1
COLLECTOR CURRENT
VCE (V)
IC
VCEsat
200
——
IC
10
(mA)
20
IC
BDTIC
β=10
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
β=10
Ta=25℃
800
600
Ta=100 ℃
400
200
0.1
1
10
COLLECTOR CURREMT
IC
——
IC
Ta=100 ℃
Ta=25℃
10
0.1
20
1
10
COLLECTOR CURREMT
(mA)
VBE
fT
2000
20
(MHz)
COMMON EMITTER
VCE=6V
——
IC
20
(mA)
IC
1000
1
TRANSITION FREQUENCY
T =2
5℃
a
T =1
00℃
a
COLLECTOR CURRENT
IC
fT
(mA)
10
100
100
COMMON EMITTER
VCE=6V
Ta=25℃
0.1
200
400
600
800
10
0.5
1000
1.0
10
Cob/Cib
——
VCB/VEB
COLLECTOR POWER DISSIPATION
PC (mW)
Ta=25 ℃
CAPACITANCE
C
(pF)
Cib
0.1
0.1
PC
750
f=1MHz
IE=0/IC=0
1
1.5
2.0
COLLECTOR CURRENT
BASE-EMMITER VOLTAGE VBE (mV)
Cob
——
2.5
IC
3.0
(mA)
Ta
625
500
375
250
125
0
1
www.BDTIC.com/jcst
REVERSE VOLTAGE
10
V
(V)
30
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150