Download SOT-523 Plastic-Encapsulate Transistors 2SC4618

Survey
yes no Was this document useful for you?
   Thank you for your participation!

* Your assessment is very important for improving the work of artificial intelligence, which forms the content of this project

page
1
page
2
Document related concepts
no text concepts found
Transcript 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate Transistors
2SC4618
TRANSISTOR (NPN)
FEATURES
 High Voltage and Current
 High DC Current Gain
 Complementary to 2SC4738
 Small Package
SOT–523
APPLICATIONS
 General Purpose Amplification
1. BASE
2. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
3. COLLECTOR
BDTIC
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
25
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
50
mA
PC
Collector Power Dissipation
150
mW
Thermal Resistance From Junction To Ambient
833
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55～+150
℃
RΘJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=50µA, IE=0
40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA, IB=0
25
V
Emitter-base breakdown voltage
V(BR)EBO
IE=50µA, IC=0
5
V
Collector cut-off current
ICBO
VCB=24V, IE=0
500
nA
Emitter cut-off current
IEBO
VEB=3V, IC=0
500
nA
DC current gain
hFE
VCE=6V, IC=1mA
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
VCE(sat)
fT
Cob
56
270
IC=10mA, IB=1mA
0.3
VCE=6V,IC=1mA , f=100MHz
150
MHz
VCB=6V, IE=0, f=1MHz
2.2
CLASSIFICATION OF hFE
RANK
N
P
Q
RANGE
56–120
82–180
120–270
MARKING
AN
AP
AQ
www.BDTIC.com/jcst
V
pF
Typical Characteristics
2SC4618
Static Characteristic
2.25
hFE
1000
——
IC
COMMON EMITTER Ta=25℃
18.0uA
1.50
16.2uA
hFE
(mA)
1.75
IC
2.00
1.25
10.8uA
1.00
9.0uA
7.2uA
0.75
Ta=100℃
DC CURRENT GAIN
COLLECTOR CURRENT
14.4uA
12.6uA
5.4uA
100
Ta=25℃
0.50
3.6uA
COMMON EMITTER
VCE= 6V
0.25
IB=1.8uA
0.00
0
1
2
3
4
5
6
COLLECTOR-EMITTER VOLTAGE
VBEsat ——
1000
7
10
0.3
8
1
IC
VCEsat
1000
50
10
COLLECTOR CURRENT
VCE (V)
——
IC
(mA)
IC
BDTIC
β=10
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
β=10
800
Ta=25℃
600
Ta=100 ℃
400
0.1
1
COLLECTOR CURREMT
IC
50
——
IC
Ta=25℃
1
VBE
1000
50
10
COLLECTOR CURREMT
(mA)
fT
——
IC
(mA)
IC
(MHz)
COMMON EMITTER
VCE=6V
10
TRANSITION FREQUENCY
T =2
5℃
a
T=
a 10
0℃
COLLECTOR CURRENT
IC
fT
(mA)
Ta=100 ℃
10
0.1
50
10
100
1
100
COMMON EMITTER
VCE= 6V
Ta=25℃
0.1
300
600
900
1200
PC
COLLECTOR POWER DISSIPATION
PC (mW)
——
1
COLLECTOR CURRENT
BASE-EMMITER VOLTAGE VBE (mV)
200
10
0.11
Ta
150
100
50
0
0
25
50
www.BDTIC.com/jcst
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
10
IC
(mA)
14
Related documents