Download TO-3P Plastic-Encapsulate Transistors 2SC5200

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-3P Plastic-Encapsulate Transistors
2SC5200
TO – 3P
TRANSISTOR (NPN)
1. BASE
FEATURES
z High Collector Current Capability
z High Power Dissipation
z High Frequency
z High Voltage
z Complement to 2SA1943
2. COLLECTOR
3. EMITTER
BDTIC
APPLICATIONS
z High-Fidelity Audio Output Amplifier
z General Purpose Power Amplifier
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
230
V
VCEO
Collector-Emitter Voltage
230
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
15
A
PC
Collector Power Dissipation
3.5
W
PCM
Collector Power Dissipation
150
W
RθJA
Thermal Resistance From Junction To Ambient
36
℃/W
(TC=25℃)
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
V(BR)CBO
*
Test
conditions
Min
Typ
Max
Unit
IC=0.1mA,IE=0
230
V
IC=50mA,IB=0
230
V
5
V
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
IE=0.1mA,IC=0
Collector cut-off current
ICBO
VCB=230V,IE=0
5
μA
Emitter cut-off current
IEBO
VEB=5V,IC=0
5
μA
hFE(1)
VCE=5V, IC=1A
55
*
hFE(2)
VCE=5V, IC=7A
35
VCE(sat)
IC=8A,IB=0.8A
VBE
VCE=5V, IC=7A
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Cob
fT
Transition frequency
160
3
1.5
V
V
VCB=10V,IE=0, f=1MHz
200
pF
VCE=5V,IC=1A
30
MHz
*Pulse test
CLASSIFICATION OF hFE (1)
RANK
R
O
RANGE
55-110
80-160
www.BDTIC.com/jcst
A,Jul,2012