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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Transistors
2SC4102
TRANSISTOR (NPN)
FEATURES
SOT–323
 High Breakdown Voltage
 Complements the 2SA1579
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
120
V
1. BASE
VCEO
Collector-Emitter Voltage
120
V
2. EMITTER
3. COLLECTOR
Emitter-Base Voltage
5
V
IC
Collector Current
50
mA
PC
Collector Power Dissipation
200
mW
Thermal Resistance From Junction To Ambient
625
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55～+150
℃
BDTIC
VEBO
RΘJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Test conditions
Symbol
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=50µA, IE=0
120
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA, IB=0
120
V
Emitter-base breakdown voltage
V(BR)EBO
IE=50µA, IC=0
5
V
Collector cut-off current
ICBO
VCB=100V, IE=0
500
nA
Emitter cut-off current
IEBO
VEB=4V, IC=0
500
nA
DC current gain
hFE
VCE=6V, IC=2mA
Collector-emitter saturation voltage
VCE(sat)
fT
Transition frequency
Cob
Collector output capacitance
180
560
IC=10mA, IB=1mA
0.5
V
VCE=12V,Ic=2mA ,f=100MHz
140
MHz
VCB=12V, IE=0, f=1MHz
2.5
pF
CLASSIFICATION OF hFE
RANK
R
S
RANGE
180–390
270–560
MARKING
TR
TS
www.BDTIC.com/jcst
Typical Characteristics
2SC4102
Static Characteristic
7
COMMON
EMITTER
Ta=25℃
18uA
IC
DC CURRENT GAIN
16uA
4
14uA
12uA
3
10uA
8uA
2
IC
Ta=100℃
20uA
5
——
hFE
(mA)
6
COLLECTOR CURRENT
hFE
1000
Ta=25℃
100
6uA
COMMON EMITTER
VCE= 6V
4uA
1
IB=2uA
0
0
2
4
6
8
COLLECTOR-EMITTER VOLTAGE
VBEsat ——
1000
10
10
0.1
12
1
COLLECTOR CURRENT
VCE (V)
IC
VCEsat
1000
——
IC
50
10
(mA)
IC
BDTIC
β=10
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
800
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
β=10
Ta=25℃
600
Ta=100 ℃
400
200
0
0.1
1
10
COLLECTOR CURREMT
IC
——
IC
Ta=100 ℃
Ta=25℃
10
0.1
50
1
VBE
fT
200
(MHz)
COMMON EMITTER
VCE=6V
——
IC
(mA)
IC
100
TRANSITION FREQUENCY
T =2
5℃
a
T =1
00℃
a
COLLECTOR CURRENT
IC
fT
10
50
10
COLLECTOR CURREMT
(mA)
50
(mA)
100
1
0.1
0
200
400
600
800
COMMON EMITTER
VCE=12V
Ta=25℃
10
1000
1
100
Cob/Cib
——
VCB/VEB
COLLECTOR POWER DISSIPATION
PC (mW)
Ta=25 ℃
CAPACITANCE
C
(pF)
Cib
10
Cob
1
0.1
PC
250
f=1MHz
IE=0/IC=0
30
10
COLLECTOR CURRENT
BASE-EMMITER VOLTAGE VBE (mV)
——
IC
(mA)
Ta
200
150
100
50
0
1
www.BDTIC.com/jcst
REVERSE VOLTAGE
10
V
(V)
30
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
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