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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323
Plastic-Encapsulate Transistors
SOT-323
2SC4116
TRANSISTOR (NPN)
FEATURES
z
High voltage and high current
z
Excellent hFE linearity
z
High hFE
z
Low noise
z
Complementary to 2SA1586
1. BASE
2. EMITTER
3. COLLECTOR
BDTIC
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
150
mA
PC
Collector Power Dissipation
100
mW
TJ
Junction Temperature
150
℃
Tstg
Junction and Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=100μA,IE=0
60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA,IB=0
50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA,IC=0
5
V
Collector cut-off current
ICBO
VCB=60V,IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=5V,IC=0
0.1
μA
DC current gain
hFE
VCE=6V,IC=2mA
Collector-emitter saturation voltage
VCE(sat)
fT
Transition frequency
Collector output capacitance
Cob
Noise figure
NF
70
IC=100mA,IB=10mA
VCE=10V,IC=1mA,
700
0.25
V
80
VCB=10V,IE=0,f=1MHz
VCE=6V,Ic=0.1mA,
f=1KHZ,Rg=10KΩ
MHz
3.5
pF
10
dB
CLASSIFICATION OF hFE
O
Y
GR
BL
Range
70-140
120-240
200-400
350-700
Marking
LO
LY
LG
LL
Rank
www.BDTIC.com/jcst
Typical Characteristics
Static Characteristic
3.5
COMMON
EMITTER
Ta=25℃
20uA
18uA
(mA)
Ta=100℃
200
2.5
hFE
16uA
14uA
2.0
DC CURRENT GAIN
IC
hFE —— IC
300
3.0
COLLECTOR CURRENT
2SC4116
12uA
10uA
1.5
8uA
6uA
1.0
Ta=25℃
120
80
4uA
0.5
COMMON EMITTER
VCE=6V
IB=2uA
0.0
0
2
4
6
COLLECTOR-EMITTER VOLTAGE
VCEsat ——
1000
8
VCE
50
0.3
10
(V)
IC
1
10
COLLECTOR CURRENT
VBEsat ——
1000
IC
(mA)
100 150
IC
BDTIC
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
β=10
100
Ta=100℃
Ta=25℃
800
Ta=25℃
Ta=100℃
600
β=10
10
0.1
1
10
COLLECTOR CURRENT
Cob / Cib
400
0.1
100 150
IC
(mA)
fT
—— VCB / VEB
IC
(MHz)
Ta=25℃
fT
(pF)
TRANSITION FREQUENCY
Cib
C
CAPACITANCE
(mA)
VCE=10V
Ta=25℃
4
Cob
100
30
10
3
10
REVERSE VOLTAGE
Pc
——
IC
300
f=1MHz
IE=0 / IC=0
1
100 150
10
COLLECTOR CURRENT
11
1
1
——
V
(V)
1
60
10
COLLECTOR CURRENT
IC
(mA)
Ta
COLLECTOR POWER DISSIPATION
PC (mW)
125
100
75
50
25
0
0
25
50
www.BDTIC.com/jcst
75
100
AMBIENT TEMPERATURE
125
Ta
(℃ )
150
B,Dec,2011
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