Download SOT-323 Plastic-Encapsulate Transistors 2SC4177

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Transistors
2SC4177
TRANSISTOR (NPN)
FEATURES
SOT–323
 High DC Current Gain
 Complementary to 2SA1611
 High Voltage
APPLICATIONS
 General Purpose Amplification
1. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
2. EMITTER
Value
Unit
3. COLLECTOR
BDTIC
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
100
mA
PC
Collector Power Dissipation
150
mW
Thermal Resistance From Junction To Ambient
833
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55～+150
℃
RΘJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=100µA, IE=0
60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA, IB=0
50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100µA, IC=0
5
V
Collector cut-off current
ICBO
VCB=60V, IE=0
100
nA
Emitter cut-off current
IEBO
VEB=5V, IC=0
100
nA
DC current gain
hFE*
VCE=6V, IC=1mA
90
600
Collector-emitter saturation voltage
VCE(sat)
IC=100mA, IB=10mA
0.3
V
Base-emitter saturation voltage
VBE(sat)
IC=100mA, IB=10mA
1
V
0.65
V
Base-emitter voltage
VBE
VCE=6V, IC=1mA
Transition frequency
fT
VCE=6V, IC=10mA
Cob
Collector output capacitance
0.55
VCB=6V, IE=0, f=1MHz
250
MHz
3
pF
*Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%.
CLASSIFICATION OF hFE
RANK
L4
L5
L6
L7
RANGE
90–180
135–270
200–400
300–600
MARKING
L4
L5
L6
L7
A,Oct,2010
www.BDTIC.com/jcst
Typical Characterisitics
hFE
Static Characteristic
9
1000
20uA
7
6
5
16uA
hFE
18uA
14uA
DC CURRENT GAIN
(mA)
IC
COLLECTOR CURRENT
IC
——
COMMON EMITTER
VCE=6V
COMMON
EMITTER
Ta=25℃
8
2SC4177
12uA
4
10uA
8uA
3
6uA
2
Ta=100℃
Ta=25℃
300
4uA
1
IB=2uA
0
0
2
4
6
8
COLLECTOR-EMITTER VOLTAGE
VCEsat
0.20
——
VCE
100
10
1
(V)
10
100
COLLECTOR CURRENT
IC
VBEsat
1.2
——
IC
(mA)
IC
BDTIC
0.15
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (V)
β=10
0.10
Ta=100℃
0.05
Ta=25℃
Ta=25℃
0.8
Ta=100℃
0.4
β=10
0.00
0.0
1
10
100
COLLECTOR CURRENT
IC
——
IC
1
(mA)
10
COLLECTOR CURRENT
Cob/ Cib
VBE
——
100
IC
(mA)
VCB/ VEB
100
100
COMMON EMITTER
VCE=6V
f=1MHz
IE=0/IC=0
(mA)
Ta=25℃
1
0.2
0.4
0.6
0.8
1.0
BASE-EMMITER VOLTAGE VBE (V)
PC
COLLECTOR POWER DISSIPATION
PC (mW)
200
——
Cib
10
C
Ta=25℃
10
CAPACITANCE
COLLECTOR CURRENT
IC
(pF)
Ta=100℃
Cob
1
0.1
0.1
1
REVERSE VOLTAGE
Ta
150
100
50
0
0
25
50
www.BDTIC.com/jcst
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
10
V
(V)
20