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Transcript 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate Transistors
2SC4003
TRANSISTOR (NPN)
TO-252-2L
FEATURES
hFE=60 to 200
High hFE
low VCE(sat) VCE(sat)=0.6V
123
123
1. BASE
2. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
BDTIC
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
400
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
0.2
A
1
W
Junction Temperature
150
℃
Storage Temperature
-55-150
℃
PC
TJ
Tstg
3. EMITTER
Collector Power Dissipation
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless
Symbol
Parameter
Test
otherwise
specified)
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=10µA,IE=0
400
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA,IB=0
400
V
Emitter-base breakdown voltage
V(BR)EBO
IE=10µA,IC=0
5
V
Collector cut-off current
ICBO
VCB=300V,IE=0
0.1
µA
Emitter cut-off current
IEBO
VEB=4V,IC=0
0.1
µA
DC current gain
hFE
VCE=10V,IC=50mA
Collector-emitter saturation voltage
VCE(sat)
IC=50mA,IB=5mA
0.6
V
Base-emitter saturation voltage
VBE(sat)
IC=50mA,IB=5mA
1
V
fT
VCE=30V,IC=10mA
Transition frequency
CLASSIFICATION OF
Rank
Range
60
200
70
hFE
D
E
60-120
100-200
www.BDTIC.com/jcst
MHz
Typical Characteristics
Static Characteristic
COMMON
EMITTER
Ta=25℃
(mA)
COMMON EMITTER
VCE= 10V
500uA
450uA
60
400uA
DC CURRENT GAIN
IC
COLLECTOR CURRENT
hFE —— IC
1000
hFE
80
2SC4003
350uA
300uA
40
250uA
200uA
Ta=100℃
Ta=25℃
100
150uA
20
100uA
IB=50uA
0
10
0
5
10
COLLECTOR-EMITTER VOLTAGE
15
VCE
1
VBEsat —— I
C
1.0
10
100
COLLECTOR CURRENT
(V)
VCEsat ——
200
IC
200
(mA)
IC
BDTIC
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
β=10
0.8
Ta=25℃
0.6
Ta=100℃
0.4
0.2
1
10
100
COLLECTOR CURRENT
Cob / Cib
1000
——
IC
fT
TRANSITION FREQUENCY
1
10
V
20
(V)
30
10
1
10
COLLECTOR CURRENT
Ta
0.75
0.50
0.25
25
50
IC
Ta=25℃
1.00
0
——
200
(A)
VCE=30V
10
0.00
100
IC
(MHz)
(pF)
C
CAPACITANCE
10
fT
100
Cob
REVERSE VOLTAGE
COLLECTOR POWER DISSIPATION
PC (W)
Ta=25℃
50
1
VCB / VEB
100
——
Ta=100℃
COLLECTOR CURRENT
Ta=25℃
PC
100
(A)
Cib
1.25
150
0
200
f=1MHz
IE=0 / IC=0
1
0.1
β=10
www.BDTIC.com/jcst
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
100
IC
(mA)
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