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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate Transistors
2SC3303
TRANSISTOR (NPN)
TO-252-2L
FEATURES
z Low Collector Saturation Voltage
z High Speed Switching Time
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
Parameter
Collector-Base Voltage
Value
Unit
100
V
BDTIC
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current
5
A
PC
Collector Power Dissipation
1
W
Thermal Resistance From Junction To Ambient
125
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=100µA,IE=0
100
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=10mA,IB=0
80
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100µA,IC=0
7
V
Collector cut-off current
ICBO
VCB=100V,IE=0
1
μA
Emitter cut-off current
IEBO
VEB=7V,IC=0
1
μA
hFE(1)
VCE=1V, IC=1A
70
hFE(2)
VCE=1V, IC=3A
40
DC current gain
240
Collector-emitter saturation voltage
VCE(sat)
IC=3A,IB=150mA
0.4
V
Base-emitter saturation voltage
VBE(sat)
IC=3A,IB=150mA
1.2
V
Collector output capacitance
Cob
fT
Transition frequency
VCB=10V,IE=0, f=1MHz
80
pF
VCE=4V,IC=1A,
20
MHz
CLASSIFICATION OF hFE(1)
RANK
O
Y
RANGE
70-140
120-240
www.BDTIC.com/jcst
B,Apr,2014
Typical Characteristics
Static Characteristic
2.2
COMMON
EMITTER
Ta=25℃
14mA
1.6
12mA
1.4
10mA
IC
COLLECTOR CURRENT
VCE= 1V
hFE
1.8
hFE —— IC
1000
18mA
16mA
1.2
8mA
1.0
6mA
0.8
o
Ta=100 C
DC CURRENT GAIN
2.0
(A)
20mA
2SC3303
o
Ta=25 C
100
4mA
0.6
0.4
IB=2mA
0.2
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
COLLECTOR-EMITTER VOLTAGE
4.0
VCE
4.5
10
1E-3
5.0
0.01
VBEsat —— IC
0.1
COLLECTOR CURRENT
(V)
VCEsat ——
900
IC
(A)
1
5
IC
BDTIC
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
β=20
1400
1200
1000
Ta=25℃
800
600
Ta=100℃
400
200
0.01
0.1
Cob / Cib
1000
IC
500
400
Ta=100℃
300
200
Ta=25℃
f=1MHz
IE=0 / IC=0
IC (A)
(pF)
COLLECTOR CURRENT
100
Cob
10
1
10
Pc
1500
——
V
(A)
VCE=1V
o
REVERSE VOLTAGE
IC
IC——VBE
5
Ta=25 C
1
0.1
5
1
COLLECTOR CURRENT
VCB / VEB
——
0.1
(A)
Cib
C
600
0
5
1
COLLECTOR CURRENT
CAPACITANCE
700
100
0
1E-3
COLLECTOR POWER DISSIPATION
Pc (mW)
β=20
800
20
(V)
1
o
Ta=100 C
Ta=25℃
0.1
0.01
1E-3
200
400
600
800
1000
BASE-EMITTER VOLTAGE
1200
1400
VBE(mV)
Ta
1200
900
600
300
0
0
25
50
www.BDTIC.com/jcst
75
AMBIENT TEMPERATURE
100
Ta
125
150
(℃ )
B,Apr,2014
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