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Transcript 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92MOD Plastic-Encapsulate Transistors
2SC3243
TO – 92M
TO – 92MOD
TRANSISTOR (NPN)
1. COLLECTOR
1. EMITTER
2. BASE
FEATURES
z High Voltage
z High Collector Current
Low VCE(sat)
z
z High Collector Dissipation
2. COLLECTOR
3. EMITTER
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
BDTIC
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current
1
A
PC
Collector Power Dissipation
900
mW
Thermal Resistance From Junction To Ambient
139
℃/W
RθJA
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= 10µA,IE=0
60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=2mA,IB=0
60
V
Emitter-base breakdown voltage
V(BR)EBO
IE=10µA,IC=0
6
V
Collector cut-off current
ICBO
VCB=50V,IE=0
0.2
μA
Emitter cut-off current
IEBO
VEB=4V,IC=0
0.2
μA
DC current gain
hFE
VCE=4V, IC=100mA
Collector-emitter saturation voltage
VCE(sat)
Cob
Collector output capacitance
fT
Transition frequency
55
300
IC=0.5A,IB=25mA
0.3
25
VCB=10V,IE=0, f=1MHz
VCE=2V,IC=10mA
80
V
pF
MHz
120
CLASSIFICATION OF hFE
RANK
C
D
E
RANGE
55-110
90-180
150-300
B,Feb,2013
www.BDTIC.com/jcst
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