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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92MOD Plastic-Encapsulate Transistors
2SC2655
TRANSISTOR (NPN)
TO-92MOD
FEATURES
z
Low Saturation Voltage: VCE(sat)=0.5V(Max)(IC=1A)
z
High Speed Switching Time: tstg=1μs(Typ.)
z
Complementary to 2SA1020
1.EMITTER
2.COLLECTOR
3.BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Symbol
Unit
BDTIC
VCBO
Collector-Base Voltage
50
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current –Continuous
2
A
Collector Power Dissipation
0.9
W
Junction Temperature
150
℃
Storage Temperature
-55-150
℃
PC
TJ
Tstg
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Symbol
Parameter
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=100μA,IE=0
50
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=10mA,IB=0
50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA,IC=0
5
V
Collector cut-off current
ICBO
VCB=50V,IE=0
1
μA
Emitter cut-off current
IEBO
VEB=5V,IC=0
1
μA
hFE(1)
VCE=2V,IC=500mA
70
hFE(2)
VCE=2V,IC=1.5A
40
Collector-emitter saturation voltage
VCE(sat)
IC=1A,IB=0.05A
0.5
V
Base-emitter saturation voltage
VBE(sat)
IC=1A,IB=0.05A
1.2
V
fT
VCE=2V,IC=0.5A
100
MHz
VCB=10V,IE=0,f=1MHz
30
pF
DC current gain
Transition frequency
Cob
Collector output capacitance
Switch time
Tune on Time
ton
Storage Time
tstg
VCC=30V,Ic=1A,
IB1=-IB2=0.05A
tf
Fall Time
240
0.15
2
0.15
CLASSIFICATION OF hFE(1)
Rank
Range
O
Y
70-140
120-240
www.BDTIC.com/jcst
μs
Typical Characteristics
2SC2655
Static Characteristic
800
COMMON
EMITTER
Ta=25℃
600
DC CURRENT GAIN
IC
2.7mA
2.4mA
2.1mA
400
1.8mA
1.5mA
300
1.2mA
200
IC
Ta=100℃
3.0mA
500
——
hFE
(mA)
700
COLLECTOR CURRENT
hFE
1000
Ta=25℃
100
0.9mA
0.6mA
100
COMMON EMITTER
VCE= 2V
IB=0.3mA
0
10
0
1
2
3
4
COLLECTOR-EMITTER VOLTAGE
VBEsat ——
2000
5
6
1
10
100
COLLECTOR CURRENT
VCE (V)
VCEsat
IC
——
IC
1000
(mA)
2000
IC
500
BDTIC
β=20
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
β=20
1000
Ta=25℃
Ta=100 ℃
Ta=100 ℃
100
Ta=25℃
10
100
1
10
100
COLLECTOR CURREMT
VBE ——
1000
IC
1
2000
fT
200
1000
1000
2000
(mA)
IC
(MHz)
COMMON EMITTER
VCE=2V
Ta=25℃
100
fT
10
1
COMMON EMITTER
VCE=2V
0.1
200
400
600
800
10
1000
5
10
——
VCB/VEB
f=1MHz
IE=0/IC=0
Cib
1000
(pF)
Ta=25 ℃
C
PC
1000
COLLECTOR POWER DISSIPATION
PC (mW)
Cob/Cib
2000
100
COLLECTOR CURRENT
BASE-EMMITER VOLTAGE VBE (mV)
CAPACITANCE
——
IC
TRANSITION FREQUENCY
IC
T =1
00℃
a
T =2
5℃
a
(mA)
100
Cob
100
10
0.5
100
IC
2000
COLLECTOR CURRENT
10
COLLECTOR CURREMT
(mA)
——
IC
(mA)
Ta
800
600
400
200
0
1
www.BDTIC.com/jcst
10
REVERSE VOLTAGE
V
(V)
30
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
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