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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92MOD Plastic-Encapsulate Transistors
2SC2482
TO-92MOD
TRANSISTOR (NPN)
1. EMITTER
FEATURE
z
High Voltage :Vceo=300V
z
Small Collector Output Capacitance: Cob=3.0pF(Typ)
2. COLLECTOR
3. BASE
BDTIC
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current -Continuous
0.1
A
Collector Power Dissipation
0.9
W
Junction Temperature
150
℃
Storage Temperature
-55-150
℃
PC
TJ
Tstg
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= 100μA, IE=0
300
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= 3mA ,IB=0
300
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 100μA,IC=0
7
V
Collector cut-off current
ICBO
VCB= 240 V, IE=0
1.0
μA
Collector cut-off current
ICEO
VCB= 220 V, IB=0
5.0
μA
Emitter cut-off current
IEBO
VEB= 7V, IC=0
1.0
μA
DC current gain
hFE
VCE=10V, IC=20mA
Collector-emitter saturation voltage
VCE(sat)
IC= 10mA, IB=1mA
1.0
V
Base-emitter saturation voltage
VBE(sat)
IC=10mA, IB=1mA
1.0
V
VCE=10V, IC=20mA,f=30MHz
fT
Transition frequency
150
50
MHz
3
VCB=20V, IE=0, f=1MHz
Cob
Collector output capacitance
30
CLASSIFICATION OF hFE
Rank
Range
O
Y
30-90
90-150
www.BDTIC.com/jcst
pF
Typical Characteristics
Static Characteristic
VCE= 10V
COMMON
EMITTER
Ta=25℃
500uA
450uA
400uA
350uA
40
300uA
30
250uA
200uA
20
o
Ta=100 C
hFE
50
hFE —— IC
300
DC CURRENT GAIN
COLLECTOR CURRENT
IC
(mA)
60
2SC2482
150uA
200
100
o
Ta=25 C
100uA
10
IB=50uA
0
0
2
4
6
8
10
12
14
COLLECTOR-EMITTER VOLTAGE
VCE
16
0
0.1
18
VBEsat —— IC
1000
1
COLLECTOR CURRENT
(V)
VCEsat ——
400
10
IC
100
(mA)
IC
BDTIC
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
β=10
800
Ta=25℃
600
400
Ta=100℃
β=10
300
200
Ta=100℃
100
200
Ta=25℃
0
0.01
0.1
1
10
COLLECTOR CURRENT
fT
——
(mA)
IC
100
1
10
Cob / Cib
——
IC
100
(mA)
VCB / VEB
f=1MHz
IE=0 / IC=0
70
o
Ta=25 C
(pF)
60
C
50
CAPACITANCE
TRANSITION FREQUENCY
0.1
COLLECTOR CURRENT
fT
(MHz)
80
IC
0
0.01
100
40
30
Cib
10
Cob
20
VCE=10V
10
o
Ta=25 C
0
10
20
30
COLLECTOR CURRENT
Pc
COLLECTOR POWER DISSIPATION
Pc (W)
1.2
——
IC
40
1
0.1
1
REVERSE VOLTAGE
(mA)
Ta
0.9
0.6
0.3
0.0
0
25
50
www.BDTIC.com/jcst
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
10
V
(V)
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