Download TO-92 Plastic-Encapsulate Transistors 2SC2120

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
2SC2120
TRANSISTOR (NPN)
1. EMITTER
FEATURES
z High DC Current Gain
z Complementary to 2SA950
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
BDTIC
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
35
V
VCEO
Collector-Emitter Voltage
30
V
5
V
IC
Collector Current
0.8
A
PC
Collector Power Dissipation
600
mW
Thermal Resistance From Junction To Ambient
208
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
VEBO
RθJA
Emitter-Base Voltage
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= 0.1mA,IE=0
35
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=10mA,IB=0
30
V
Emitter-base breakdown voltage
V(BR)EBO
IE=0.1mA,IC=0
5
V
Collector cut-off current
ICBO
VCB=35V,IE=0
0.1
μA
Collector cut-off current
ICEO
VCE=25V,IB=0
0.1
μA
Emitter cut-off current
IEBO
VEB=5V,IC=0
0.1
μA
DC current gain
hFE
VCE=1V, IC=100mA
VCE(sat)
IC=500mA,IB=20mA
0.5
V
Collector-emitter saturation voltage
100
320
Base-emitter voltage
VBE
VCE=1V, IC=10mA
0.8
V
Collector output capacitance
Cob
VCB=10V,IE=0, f=1MHz
13
pF
fT
Transition frequency
VCE=5V,IC=10mA
100
MHz
CLASSIFICATION OF hFE
RANK
O
Y
RANGE
100-200
160-320
B,Dec,2011
www.BDTIC.com/jcst
Typical Characterisitics
Static Characteristic
200
1mA
hFE
DC CURRENT GAIN
120
IC
Ta=100℃
600uA
IC
(mA)
700uA
——
COMMON EMITTER
VCE=1V
COMMON
EMITTER
Ta=25℃
800uA
COLLECTOR CURRENT
hFE
1000
900uA
160
2SC2120
500uA
400uA
80
300uA
200uA
Ta=25℃
100
40
IB=100uA
10
0
0.0
0.4
0.8
1.2
1.6
COLLECTOR-EMITTER VOLTAGE
VCEsat
600
——
VCE
2.0
1
3
30
10
100
COLLECTOR CURRENT
(V)
IC
VBEsat
2
IC
800
300
(mA)
IC
——
100
Ta=100℃
Ta=25℃
30
10
1
10
3
IC
800
IC
1
Ta=25℃
Ta=100℃
0.1
800
1
3
—— VBE
Cob/ Cib
100
——
300
100
COLLECTOR CURRENT
IC
VCB/ VEB
Ta=25℃
Cib
(mA)
800
(mA)
f=1MHz
IE=0/ IC=0
(pF)
30
30
C
100
CAPACITANCE
Ta=100℃
Ta=25℃
10
Cob
10
3
3
1
0.2
0.4
0.6
0.8
1
0.1
1.0
fT
500
1
0.3
—— IC
PC
800
10
3
REVERSE VOLTAGE
BASE-EMMITER VOLTAGE VBE (V)
V
20
(V)
—— Ta
VCE=5V
COLLECTOR POWER DISSIPATION
Pc (mW)
(MHz)
Ta=25℃
fT
TRANSITION FREQUENCY
30
10
(mA)
COMMON EMITTER
VCE=1V
300
IC
300
100
30
COLLECTOR CURRENT
COLLECTOR CURRENT
β=25
300
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BDTIC
β=25
100
10
1
3
600
400
200
0
www.BDTIC.com/jcst
30
10
COLLECTOR CURRENT
IC
(mA)
100
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
150
(℃ )
B,Dec,2011