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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92MOD Plastic-Encapsulate Transistors
TO-92MOD
2SC2236
TRANSISTOR (NPN)
1. EMITTER
FEATURE
2. COLLECTOR
Complementary to 2SA966 and 3 Watts output Applications.
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
BDTIC
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
30
V
VCEO
Collector-Emitter Voltage
30
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
1.5
A
Collector Power Dissipation
PC
TJ
Tstg
0.9
W
Junction Temperature
150
℃
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= 1mA , IE=0
30
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= 10mA ,
30
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 1mA, IC=0
5
V
IB=0
Collector cut-off current
ICBO
VCB=30V ,
IE=0
0.1
µA
Emitter cut-off current
IEBO
VEB=5V ,
IC=0
0.1
µA
DC current gain
hFE
VCE=2 V,
Collector-emitter saturation voltage
VCE(sat)
IC= 500mA
2
V
1
V
VBE
IC= 500 mA, VCE= 2V
Transition frequency
fT
VCE= 2V, IC= 500mA
Cob
320
IC= 1.5 A, IB= 0.03A
Base-emitter voltage
Collector output Capacitance
100
120
VCB= 10V, IE= 0,f=1MHz
30
CLASSIFICATION OF hFE
Rank
Range
O
Y
100-200
160-320
www.BDTIC.com/jcst
MHz
pF
Typical Characteristics
Static Characteristic
1500
hFE
4.0mA
3.5mA
DC CURRENT GAIN
(mA)
IC
COLLECTOR CURRENT
VCE= 2V
COMMON
EMITTER
Ta=25℃
4.5mA
1000
hFE —— IC
500
5.0mA
1250
2SC2236
3.0mA
2.5mA
750
2.0mA
500
1.5mA
400
o
Ta=100 C
300
200
o
Ta=25 C
100
1.0mA
250
IB=0.5mA
0
0
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE
VCE
6
1
VBEsat —— IC
1.0
10
100
COLLECTOR CURRENT
(V)
VCEsat ——
500
IC
1000 1500
(mA)
IC
BDTIC
0.8
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
β=50
Ta=25℃
0.6
Ta=100℃
0.4
β=50
450
400
350
300
250
Ta=100℃
200
150
100
Ta=25℃
50
0.2
0.1
1
10
COLLECTOR CURRENT
fT
——
10
IC
Cob / Cib
1000
1000 1500
100
COLLECTOR CURRENT
——
IC
(mA)
VCB / VEB
f=1MHz
IE=0 / IC=0
250
o
Ta=25 C
(pF)
C
200
CAPACITANCE
TRANSITION FREQUENCY
1
(mA)
fT
(MHz)
300
IC
0
1000 1500
100
150
100
50
100
Cib
Cob
10
VCE=2V
o
Ta=25 C
0
20
40
60
COLLECTOR CURRENT
VBE ——
80
IC
1
0.1
100
IC
COLLECTOR POWER DISSIPATION
Pc (W)
IC (mA)
COLLECTOR CURRENT
Pc
1.2
1500
1000
100
1
10
REVERSE VOLTAGE
(mA)
o
Ta=100 C
10
Ta=25℃
1
——
V
20
(V)
Ta
0.9
0.6
0.3
VCE=2V
0.1
0.2
0.0
0.4
www.BDTIC.com/jcst
0.6
BASE-EMITTER VOLTAGE
0.8
VBE(V)
1.0
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
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