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Transcript 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
2SC2235
TO-92L
TRANSISTOR (NPN)
1. EMITTER
FEATURES
Complementary to 2SA965
2. COLLECTER
3. BASE
MAXIMUM RATINGS (Ta =25℃ unless otherwise noted)
Symbol
VCBO
B
IC
B
B
PC
B
B
TJ
B
B
Tstg
B
B
Collector-Base Voltage
Unit
120
V
BDTIC
VEBO
B
B
Value
Collector-Emitter Voltage
VCEO
B
Parameter
B
B
120
V
5
V
Collector Current -Continuous
0.8
A
Collector Power Dissipation
0.9
W
Junction Temperature
150
℃
Storage Temperature
-55~+150
℃
Emitter-Base Voltage
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Test
Symbol
Parameter
Collector-base breakdown voltage
V(BR)CBO
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-Base breakdown voltage
V(BR)EBO
B
B
B
B
B
Min
Typ
Max
Unit
IC=1mA,IE=0
120
V
IC=10mA,IB=0
120
V
IE=1mA,IC=0
5
V
B
B
conditions
B
B
B
B
B
B
B
B
B
B
B
Collector cut-off current
ICBO
VCB=120V,IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=5V,IC=0
0.1
μA
DC current gain
hFE
VCE=5V,IC=100mA
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
80
240
VCE(sat)
IC=500mA,IB=50mA
1.0
V
Base-emitter voltage
VBE
IC=500mA, VCE=5V
1.0
V
Transition frequency
fT
VCE=5V, IC=100mA
Collector-emitter saturation voltage
B
B
B
B
B
B
B
B
B
CLASSIFICATION OF
Rank
Range
Cob
B
B
B
B
B
B
B
B
120
VCE=10V, IE=0
B
Collector output capacitance
B
B
B
MHz
B
30
f=1MHz
hFE
O
Y
80-160
120-240
www.BDTIC.com/jcst
pF
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