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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92MOD Plastic-Encapsulate Transistors
2SC2235
TO-92MOD
TRANSISTOR (NPN)
1. EMITTER
FEATURES
Complementary to 2SA965
2. COLLECTER
3. BASE
MAXIMUM RATINGS ( Taa=25℃ unless otherwise noted)
Symbol
VCBO
B
B
B
B
TJ
B
Tstg
B
120
B
V
B
120
V
5
V
0.8
A
Emitter-Base Voltage
Collector Power Dissipation
PC
B
B
Collector Current -Continuous
IC
B
Collector-Base Voltage
Unit
BDTIC
VEBO
B
B
Value
Collector-Emitter Voltage
VCEO
B
Parameter
0.9
W
Junction Temperature
150
℃
Storage Temperature
-55to+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Test
Symbol
Parameter
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
=
IC=1mA,IE 0 120
V
Collector-emitter breakdown voltage
V(BR)CEO=
IC=10mA,IB 0 120
V
Emitter-Base breakdown voltage
V(BR)EBO
=
IE=1mA,IC 0 5
V
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
Collector cut-off current
ICBO =
VCB=120V,IE 0
0.1
μA
Emitter cut-off current
I=
VEB=5V,IC 0
EBO
0.1
μA
DC current gain
hFE
=
VCE=5V,IC 100mA 80
240
VCE(sat)
IC=
=500mA,IB 50mA
1.0
V
Base-emitter voltage
VBE
IC==
500mA, VCE 5V
1.0
V
Transition frequency
fT
B
B
Rank
Range
B
B
B
B
B
B
B
B
B
B
B
B
Collector output capacitance
B
B
B
Collector-emitter saturation voltage
CLASSIFICATION OF
B
B
Cob
B
B
B
B
B
B
B
B
B
B
B
B
B
=
VCE=5V, IC 100mA
B
B
B
B
120
VCB=10V, IE=0
B
B
30
B
f=1MHz
hFE
O
Y
80-160
120-240
www.BDTIC.com/jcst
MHz
pF
Typical Characteristics
Static Characteristic
150
140
COLLECTOR CURRENT
90
640uA
560uA
80
o
Ta=100 C
hFE
IC
100
720uA
110
VCE= 5V
COMMON
EMITTER
Ta=25℃
DC CURRENT GAIN
(mA)
120
hFE —— IC
300
800uA
130
2SC2235
480uA
70
400uA
60
320uA
50
200
100
240uA
40
30
o
Ta=25 C
160uA
20
IB=80uA
10
0
0
0
2
4
6
8
COLLECTOR-EMITTER VOLTAGE
VCE
10
1
VBEsat —— IC
1.0
10
100
COLLECTOR CURRENT
(V)
VCEsat ——
200
IC
800
(mA)
IC
BDTIC
0.8
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
β=10
Ta=25℃
0.6
Ta=100℃
0.4
β=10
150
100
Ta=100℃
50
Ta=25℃
0.2
0.1
1
10
COLLECTOR CURRENT
fT
1000
——
IC
0
0.1
800
100
1
(mA)
10
IC
Cob / Cib
1000
——
IC
(mA)
VCB / VEB
f=1MHz
IE=0 / IC=0
VCE=5V
o
o
CAPACITANCE
C
fT
TRANSITION FREQUENCY
100
80
90
COLLECTOR CURRENT
VBE ——
IC
Cib
100
10
Cob
1
0.1
100
1
10
REVERSE VOLTAGE
(mA)
IC
Pc
1.2
COLLECTOR POWER DISSIPATION
Pc (W)
1000
IC (mA)
Ta=25 C
(pF)
(MHz)
Ta=25 C
10
70
COLLECTOR CURRENT
800
100
COLLECTOR CURRENT
100
o
Ta=100 C
10
Ta=25℃
1
——
V
20
(V)
Ta
0.9
0.6
0.3
VCE=5V
0.1
0.2
0.0
0.4
www.BDTIC.com/jcst
0.6
BASE-EMITTER VOLTAGE
0.8
VBE(V)
1.0
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
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