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Transcript 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92MOD Plastic-Encapsulate Transistors
TO-92MOD
2SC2230/2230A TRANSISTOR (NPN)
1. EMITTER
FEATURE
z
High voltage: VCEO=180V(2SC2230A)
z
High DC Current Gain
2. COLLECTOR
3. BASE
BDTIC
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Value
Unit
200
V
2SC2230
160
2SC2230A
180
V
5
V
Collector Current -Continuous
0.1
A
PC
Collector Power Dissipation
0.8
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55 to +150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃
Parameter
unless
otherwise
specified)
Symbol
Test
Collector-base breakdown voltage
V(BR)CBO
IC= 100µA , IE=0
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
IE= 10µA, IC =0
Collector cut-off current
ICBO
VCB=200V, IE=0
0.1
µA
Emitter cut-off current
IEBO
VEB=5V, IC=0
0.1
µA
hFE（
VCE=10 V, IC= 10mA
120
hFE2
VCE=10 V, IC= 50mA
80
VCE(sat)
IC= 50m A, IB= 5mA
Base-emitter voltage
VBE
IC= 1 mA, VCE= 10V
0.5
Transition frequency
fT
VCE= 10 V, IC= 10mA
50
Collector output capacitance
Cob
VCB=10V,IE=0,f=1MHz
DC current gain
Collector-emitter saturation voltage
conditions
Min
Max
200
IC= 10 mA, IB=0
2SC2230
160
2SC2230A
180
V
V
5
V
400
Range
V
0.7
V
7
Y
GR
120-240
200-400
www.BDTIC.com/jcst
0.5
MHz
CLASSIFICATION OF hFE1
Rank
Unit
pF
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