Download TO-92 Plastic-Encapsulate Transistors 2SC2130

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
2SC2130
TRANSISTOR (NPN)
1. EMITTER
FEATURES
z High DC Current Gain
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
BDTIC
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
45
V
VCEO
Collector-Emitter Voltage
40
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
0.8
A
PC
Collector Power Dissipation
600
mW
Thermal Resistance From Junction To Ambient
208
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= 0.1mA,IE=0
45
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=10mA,IB=0
40
V
Emitter-base breakdown voltage
V(BR)EBO
IE=0.1mA,IC=0
5
V
Collector cut-off current
ICBO
VCB=35V,IE=0
0.1
μA
Collector cut-off current
ICEO
VCE=25V,IB=0
0.1
μA
Emitter cut-off current
IEBO
VEB=5V,IC=0
0.1
μA
DC current gain
hFE
VCE=1V, IC=100mA
VCE(sat)
IC=500mA,IB=20mA
0.5
V
0.8
V
Collector-emitter saturation voltage
Base-emitter voltage
VBE
VCE=1V, IC=10mA
Collector output capacitance
Cob
VCB=10V,IE=0, f=1MHz
fT
Transition frequency
VCE=5V,IC=10mA
100
320
13
100
CLASSIFICATION OF hFE
RANK
O
Y
RANGE
100-200
160-320
www.BDTIC.com/jcst
pF
MHz
Typical Characteristics
Static Characteristic
150
VCE= 1V
COMMON
EMITTER
Ta=25℃
hFE
450uA
(mA)
400uA
DC CURRENT GAIN
IC
COLLECTOR CURRENT
hFE —— IC
500
500uA
100
2SC2130
350uA
300uA
250uA
200uA
50
400
o
Ta=100 C
300
200
o
Ta=25 C
150uA
100
100uA
IB=50uA
0
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE
VCE
0
0.01
6
VBEsat —— IC
1.2
0.1
1
10
COLLECTOR CURRENT
(V)
VCEsat ——
300
IC
(mA)
100
800
IC
BDTIC
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
β=25
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
1.0
0.8
Ta=25℃
0.6
0.4
Ta=100℃
β=25
200
100
Ta=100℃
0.2
Ta=25℃
0.0
0.1
1
10
100
COLLECTOR CURRENT
fT
——
10
Cob / Cib
IC
——
200
100
IC
(mA)
VCB / VEB
f=1MHz
IE=0 / IC=0
Cib
o
Ta=25 C
(pF)
250
C
200
800
100
COLLECTOR CURRENT
CAPACITANCE
TRANSITION FREQUENCY
1
(mA)
fT
(MHz)
300
IC
0
0.1
800
150
100
50
Cob
10
VCE=5V
o
Ta=25 C
0
10
20
30
COLLECTOR CURRENT
VBE ——
40
IC
1
0.1
50
IC
COLLECTOR POWER DISSIPATION
Pc (mW)
IC (mA)
Pc
800
800
COLLECTOR CURRENT
1
10
REVERSE VOLTAGE
(mA)
100
o
Ta=100 C
10
Ta=25℃
1
——
V
20
(V)
Ta
700
600
500
400
300
200
100
0.1
0.2
VCE=1V
0.4
0.6
0
www.BDTIC.com/jcst
0.8
BASE-EMITTER VOLTAGE
1.0
VBE(V)
1.2
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150