Download TO-92 Plastic-Encapsulate Transistors 2SC2001

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO-92
2SC2001
TRANSISTOR (NPN)
1. EMITTER
FEATURES
z
High hFE and Low VCE(sat)
hFE(IC=100mA) : 200(Typ)
VCE(sat)(700mA): 0.2V (Typ)
2. COLLECTOR
3. BASE
BDTIC
MAXIMUM RATINGS(Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
30
V
VCEO
Collector-Emitter Voltage
25
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
700
mA
PC
Collector Power Dissipation
600
mW
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Symbol
Parameter
Test
conditions
Min
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=100µA, IE=0
30
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=10mA ,
25
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100µA, IC=0
5
V
IB=0
Collector cut-off current
ICBO
VCB=30 V, IE=0
0.1
µA
Collector cut-off current
ICEO
VCE=20 V, IB=0
0.1
µA
Emitter cut-off current
IEBO
VEB=5 V, IC=0
0.1
µA
DC current gain
hFE
VCE=1V, IC=100mA
Collector-emitter saturation voltage
VCE(sat)
IC=700mA, IB= 70mA
0.6
V
Base-emitter saturation voltage
VBE(sat)
IC= 700mA, IB=70mA
1.2
V
Transition frequency
fT
VCE=6V, IC= 10mA
f = 30MHz
90
400
50
MHz
CLASSIFICATION OF hFE
Rank
Range
M
L
K
90-180
135-270
200-400
www.BDTIC.com/jcst
2SC2001
Typical Characterisitics
Static Characteristic
150
hFE
1000
IC
——
hFE
450uA
400uA
90
DC CURRENT GAIN
COLLECTOR CURRENT
o
Ta=100 C
500uA
120
IC
(mA)
COMMON EMITTER
Ta=25℃
350uA
300uA
250uA
60
200uA
150uA
30
o
Ta=25 C
100
100uA
COMMON EMITTER
VCE=1V
IB=50uA
0
0.0
0.5
1.0
1.5
2.0
COLLECTOR-EMITTER VOLTAGE
VCEsat
——
VCE
10
0.1
2.5
1
10
100
COLLECTOR CURRENT
(V)
VBEsat
IC
——
IC
700
(mA)
IC
1200
1000
BDTIC
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
β=10
Ta=100℃
100
Ta=25℃
1000
800
Ta=25℃
600
Ta=100℃
400
β=10
10
0.1
1
10
100
COLLECTOR CURRENT
IC
IC
200
0.1
700
1
10
100
COLLECTOR CURRENT
(mA)
Cob/ Cib
—— VBE
IC
700
(mA)
—— VCB/ VEB
100
700
COMMON EMITTER
VCE=1V
f=1MHz
IE=0/ IC=0
(pF)
Ta=25℃
1
0.1
200
400
600
800
BASE-EMMITER VOLTAGE
fT
1000
VBE
10
Cob
1
0.1
1200
1
10
REVERSE VOLTAGE
(mV)
—— IC
Pc
——
V
20
(V)
Ta
750
fT
COLLECTOR POWER DISSIPATION
Pc (mW)
(MHz)
1000
TRANSITION FREQUENCY
Cib
C
Ta=100℃
10
CAPACITANCE
COLLCETOR CURRENT
IC
(mA)
o
Ta=25 C
100
100
COMMON EMITTER
VCE=6V
600
450
300
150
o
Ta=25 C
10
0
1
www.BDTIC.com/jcst
10
COLLECTOR CURRENT
100
IC
(mA)
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
150
(℃)
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