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Transcript 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
TO-92L
2SC2060 TRANSISTOR (NPN)
1. EMITTER
FEATURE
2. COLLECTOR
z
Power Dissipation PCM: 0.75
z
Low Saturation Voltage (VCE(sat)=0.15V at 500mA)
z
Complementary Pair with 2SA934
W (Ta=25℃)
3. BASE
BDTIC
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Unit
40
V
VCBO
VCEO
Collector-Emitter Voltage
32
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
1
A
Collector Power Dissipation
750
mW
Junction Temperature
150
℃
Storage Temperature
-55-150
℃
PC
TJ
Tstg
voltage
Value
Collector-base
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= 100μA , IE=0
40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= 1mA , IB=0
32
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 100μA, IC=0
5
V
Collector cut-off current
ICBO
VCB=20V ,
IE=0
0.5
μA
Emitter cut-off current
IEBO
VEB=4V ,
IC=0
0.1
μA
hFE
VCE=3V,
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
VCE(sat)
fT
Cob
IC= 100mA
80
IC= 500m A, IB= 50mA
VCE=5V,
IE=-50mA
VCB=10V,IE=0,f=1MHz
www.BDTIC.com/jcst
400
0.4
50
V
MHz
30
pF
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