Download TO-92 Plastic-Encapsulate Transistors 2SC1923

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
2SC1923
TRANSISTOR (NPN)
1. EMITTER
2. COLLECTOR
FEATURES
z General Purpose Switching Application
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
BDTIC
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
30
V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current
0.02
A
PC
Collector Power Dissipation
100
mW
Thermal Resistance From Junction To Ambient
1250
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= 0.1mA,IE=0
40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA,IB=0
30
V
Emitter-base breakdown voltage
V(BR)EBO
IE=0.1mA,IC=0
4
V
Collector cut-off current
ICBO
VCB=18V,IE=0
Emitter cut-off current
IEBO
VEB=4V,IC=0
DC current gain
hFE
VCE=6V, IC=1mA
fT
VCE=6V,IC=1mA
Transition frequency
40
0.5
μA
0.5
μA
200
550
MHz
CLASSIFICATION OF hFE
RANK
R
O
Y
RANGE
40-80
70-140
100-200
www.BDTIC.com/jcst
B,Nov,2011
Typical Characteristics
Static Characteristic
4
hFE
24uA
21uA
DC CURRENT GAIN
(mA)
COMMON EMITTER
VCE= 6V
COMMON
EMITTER
Ta=25℃
27uA
IC
COLLECTOR CURRENT
hFE —— IC
1000
30uA
3
2SC1923
18uA
2
15uA
12uA
9uA
1
Ta=100℃
Ta=25℃
100
6uA
IB=3uA
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE
fT
1000
——
12
VCE
10
0.01
14
0.1
1
COLLECTOR CURRENT
(V)
IC
Cob / Cib
10
——
10
IC
20
(mA)
VCB / VEB
BDTIC
(MHz)
f=1MHz
IE=0 / IC=0
Cib
C
CAPACITANCE
TRANSITION FREQUENCY
fT
(pF)
Ta=25℃
300
1
Cob
VCE=6V
Ta=25℃
100
1
3
10
COLLECTOR CURRENT
PC
COLLECTOR POWER DISSIPATION
PC (W)
0.125
——
IC
0.1
3
1
REVERSE VOLTAGE
(mA)
10
V
(V)
Ta
0.100
0.075
0.050
0.025
0.000
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
150
(℃ )
www.BDTIC.com/jcst
B,Nov,2011