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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
SOT-23
2SC1623
TRANSISTOR (NPN)
FEATURES
z High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA
z High voltage:VCEO=50V
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
BDTIC
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
100
mA
PC
Collector Power Dissipation
200
mW
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Symbol Test conditions
Parameter
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=100μA,IE=0
60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA,IB=0
50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA,IC=0
5
V
Collector cut-off current
ICBO
VCB=60V,IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=5V,IC=0
0.1
μA
DC current gain
hFE
VCE=6V,IC=1mA
90
200
600
Collector-emitter saturation voltage
VCE(sat)
IC=100mA,IB=10mA
0.3
V
Base-emitter saturation voltage
VBE(sat)
IC=100mA,IB=10mA
1
V
fT
Transition frequency
VCE=6V,IC=10mA
250
MHz
CLASSIFICATION OF hFE
Rank
Range
Marking
L4
L5
L6
L7
90-180
135-270
200-400
300-600
L4
L5
L6
L7
www.BDTIC.com/jcst
Typical Characteristics
2SC1623
Static Characteristic
4
COMMON
EMITTER
Ta=25℃
10uA
3
IC
8uA
6uA
5uA
4uA
3uA
1
IC
Ta=25℃
DC CURRENT GAIN
7uA
2
——
Ta=100℃
hFE
(mA)
9uA
COLLECTOR CURRENT
hFE
1000
100
2uA
COMMON EMITTER
VCE= 6V
IB=1uA
0
0
2
4
6
COLLECTOR-EMITTER VOLTAGE
VBEsat ——
2000
10
0.1
8
1
COLLECTOR CURRENT
VCE (V)
VCEsat
IC
——
10
IC
100
(mA)
IC
300
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
BDTIC
1000
Ta=25℃
Ta=100 ℃
100
Ta=100 ℃
Ta=25℃
β=10
100
0.1
1
10
COLLECTOR CURREMT
IC
——
1
10
COLLECTOR CURREMT
(mA)
VBE
fT
1000
——
IC
100
(mA)
IC
T =2
5℃
a
TRANSITION FREQUENCY
10
T =1
00℃
a
COLLECTOR CURRENT
IC
fT
(mA)
(MHz)
100
IC
β=10
10
0.1
100
1
COMMON EMITTER
VCE=6V
0.1
0.0
0.3
0.6
0.9
100
COMMON EMITTER
VCE=6V
Ta=25℃
10
1.2
1
50
Cob/Cib
——
VCB/VEB
COLLECTOR POWER DISSIPATION
PC (mW)
10
Cib
C
(pF)
Ta=25 ℃
CAPACITANCE
PC
250
f=1MHz
IE=0/IC=0
Cob
1
0.1
0.1
70
10
COLLECTOR CURRENT
BASE-EMMITER VOLTAGE VBE (V)
——
IC
(mA)
Ta
200
150
100
50
0
1
www.BDTIC.com/jcst
REVERSE VOLTAGE
10
V
(V)
20
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
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