Download TO-92MOD Plastic-Encapsulate Transistors 2SB985

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92MOD Plastic-Encapsulate Transistors
2SB985
TO-92MOD
TRANSISTOR (PNP)
1. EMITTER
FEATURES
z
Power Supplies, Relay Drivers, Lamp Drivers
z
Adoption of FBET,MBIT Processes
z
Low Saturation Voltage
z
Large Current Capacity and Wide ASO
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
BDTIC
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current -Continuous
-3
A
Collector Power Dissipation
0.9
W
PC
RθJA
Thermal Resistance Junction to Ambient
139
℃/W
TJ
Junction Temperature
150
℃
Storage Temperature
-55-150
℃
Tstg
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=-10μA, IE=0
-60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-1mA, IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-10μA, IC=0
-6
V
Collector cut-off current
ICBO
VCB=-40V, IE=0
-1
μA
Emitter cut-off current
IEBO
VEB=-4V, IC=0
-1
μA
hFE(1)
VCE=-2V, IC=-100mA
hFE(2)
VCE=-2V, IC=-3A
100
560
DC current gain
40
Collector-emitter saturation voltage
VCE(sat)
IC=-2A, IB=-100mA
-0.7
V
Base-emitter saturation voltage
VBE(sat)
IC=-2A, IB=-100mA
-1.2
V
fT
Transition frequency
Cob
Collector output capacitance
CLASSIFICATION OF
Rank
Range
VCE=-10V, IC=-50mA
150
MHz
VCB=-10V, IE=0, f=1MHz
39
pF
hFE(1)
R
S
T
U
100-200
140-280
200-400
280-560
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2SB985
Typical Characteristics
hFE
Static Characteristic
-120
IC
-0.60mA
-0.48mA
hFE
-80
-0.42mA
DC CURRENT GAIN
-0.54mA
(mA)
IC
COLLECTOR CURRENT
——
1000
COMMON EMITTER
Ta=25℃
-0.36mA
-0.30mA
-0.24mA
-40
-0.18mA
Ta=100℃
Ta=25℃
100
-0.12mA
COMMON EMITTER
VCE=-2V
IB=-0.06mA
-0
-0.0
-0.5
-1.0
-1.5
-2.0
COLLECTOR-EMITTER VOLTAGE
VCEsat
-400
VCE
10
-2.5
-1
-10
-100
-1000
COLLECTOR CURRENT
(V)
VBEsat
—— IC
IC
-3000
(mA)
—— IC
-1200
β=20
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BDTIC
β=20
-100
Ta=100℃
Ta=25℃
-10
-10
-100
COLLECTOR CURRENT
IC
-3000
Ta=25℃
-600
Ta=100℃
-400
-1000
IC
-1
-3000
-10
-100
COLLECTOR CURRENT
(mA)
—— VBE
Cob/ Cib
1000
COMMON EMITTER
VCE=-2V
(mA)
-1000
(pF)
Ta=100℃
Ta=25℃
-10
-400
-600
-800
BASE-EMMITER VOLTAGE
fT
VCB/ VEB
f=1MHz
IE=0 / IC=0
VBE
Ta=25℃
100
10
-0.1
-1200
-1
-10
REVERSE VOLTAGE
(mV)
—— IC
PC
1000
fT
COLLECTOR POWER DISSIPATION
PC (mW)
(MHz)
1000
-1000
100
COMMON EMITTER
VCE=-10V
-3000
(mA)
Cob
C
CAPACITANCE
-100
-1
-200
——
-1000
IC
Cib
IC
COLLCETOR CURRENT
-800
-200
-1
TRANSITION FREQUENCY
-1000
——
V
-20
(V)
Ta
800
600
400
200
Ta=25℃
10
-50
-80
-80
-60
0
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COLLECTOR CURRENT
-70
IC
(mA)
-80
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150