Download TO-92L Plastic-Encapsulate Transistors 2SB892

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
2SB892
TO-92L
TRANSISTOR (PNP)
1. EMITTER
FEATURE
z Power Supplies, Relay Drivers, Lamp Drivers,
and Automotive Wiring
z Low Saturation Voltage.
z Large Current Capacity and Wide ASO.
2. COLLECTOR
3. BASE
BDTIC
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-50
V
V
IC
Emitter-Base Voltage
Collector Current -Continuous
-6
PC
Collector Dissipation
VEBO
-2
A
0.75
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃
Parameter
Symbol
unless
otherwise
Test
specified)
conditions
Min
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= -100μA , IE=0
-60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= -1mA , IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=- 100μA, IC=0
-6
V
Collector cut-off current
ICBO
VCB= -50V ,
IE=0
-0.1
μA
Emitter cut-off current
IEBO
VEB= -4V ,
IC=0
-0.1
μA
hFE(1)
VCE=-2V,
IC= -100mA
100
hFE(2)
VCE=-2V,
IC= -1.5A
40
DC current gain
560
Collector-emitter saturation voltage
VCE(sat)
IC= -1A, IB= -50mA
-0.4
V
Base-emitter saturation voltage
VBE(sat)
IC= -1A, IB= -50mA
-1.2
V
fT
Transition frequency
VCE= -10 V, IC= -50mA
150
MHz
CLASSIFICATION OF hFE(1)
Rank
Range
R
S
T
U
100-200
140-280
200-400
280-560
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2SB892
Typical Characteristics
-0.50mA
-100
-0.35mA
-0.30mA
-0.25mA
-0.20mA
-50
-0.15mA
Ta=100℃
hFE
-0.40mA
DC CURRENT GAIN
(mA)
IC
IC
1000
COMMON EMITTER
Ta=25℃
-0.45mA
COLLECTOR CURRENT
——
hFE
Static Characteristic
-150
Ta=25℃
100
-0.10mA
COMMON EMITTER
VCE=-2V
IB=-0.05mA
-0
-0.0
-0.5
-1.0
-1.5
-2.0
COLLECTOR-EMITTER VOLTAGE
VCEsat
-400
VCE
10
-2.5
-1
-10
VBEsat
—— IC
-1000 -2000
-100
COLLECTOR CURRENT
(V)
IC
(mA)
—— IC
-1200
β=20
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BDTIC
β=20
-100
Ta=100℃
Ta=25℃
-10
-10
-100
COLLECTOR CURRENT
IC
-2000
Ta=25℃
Ta=100℃
-600
-400
-1000 -2000
IC
-1
-10
—— VBE
Cob/ Cib
1000
-1000 -2000
-100
COLLECTOR CURRENT
(mA)
——
IC
(mA)
VCB/ VEB
COMMON EMITTER
VCE=-2V
-1000
f=1MHz
IE=0 / IC=0
(pF)
(mA)
Ta=25℃
Ta=100℃
IC
Cib
C
-100
CAPACITANCE
COLLCETOR CURRENT
-800
-200
-1
Ta=25℃
-10
-1
-200
-400
-600
-800
BASE-EMMITER VOLTAGE
fT
-1000
VBE
100
Cob
10
-0.1
-1200
-1
-10
REVERSE VOLTAGE
(mV)
—— IC
PC
900
fT
COLLECTOR POWER DISSIPATION
PC (mW)
(MHz)
1000
TRANSITION FREQUENCY
-1000
100
COMMON EMITTER
VCE=-10V
——
V
-20
(V)
Ta
750
600
450
300
150
Ta=25℃
10
-10
0
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-100
COLLECTOR CURRENT
IC
(mA)
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150