Download TO-92 Plastic-Encapsulate Transistors 2SB1322A

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
2SB1322A
TRANSISTOR (PNP)
1. EMITTER
2. COLLECTOR
FEATURES
z Allowing Supply with The Radial Taping
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
BDTIC
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current
-1
A
PC
Collector Power Dissipation
625
mW
Thermal Resistance From Junction To Ambient
200
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= -0.01mA,IE=0
-60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-2mA,IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-0.01mA,IC=0
-5
V
Collector cut-off current
Emitter cut-off current
DC current gain
ICBO
VCB=-20V,IE=0
IEBO
VEB=-5V,IC=0
hFE(1)
VCE=-10V, IC=-0.5A
85
hFE(2)
VCE=-5V, IC=-1A
50
-0.1
μA
-0.1
μA
340
Collector-emitter saturation voltage
VCE(sat)
IC=-0.5A,IB=-0.05A
-0.4
V
Base-emitter saturation voltage
VBE (sat)
IC=-0.5A,IB=-0.05A
-1.2
V
VCB=-10V,IE=0, f=1MHz
30
pF
Cob
Collector output capacitance
fT
Transition frequency
VCE=-10V,IC= -0.05A, f=200MHz
200
MHz
CLASSIFICATION OF hFE(1)
RANK
Q
R
S
RANGE
85-170
120-240
170-340
www.BDTIC.com/jcst
Typical Characteristics
2SB1322A
Static Characteristic
COMMON EMITTER
VCE= -10V
-4.5mA
-5mA
-3mA
-600
IC
Ta=100℃
Ta=25℃
DC CURRENT GAIN
-3.5mA
-800
——
hFE
-4mA
IC
(mA)
COMMON
EMITTER
Ta=25℃
-1000
COLLECTOR CURRENT
hFE
1000
-1200
-2.5mA
-2mA
-400
-1.5mA
100
-1mA
-200
IB= -0.5mA
-0
10
-0
-2
-4
-6
-8
COLLECTOR-EMITTER VOLTAGE
VBEsat ——
-1000
-10
-12
-1
-10
COLLECTOR CURRENT
VCE (V)
IC
VCEsat
-500
——
-100
IC
-1000
(mA)
IC
BDTIC
β=10
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
-800
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
β=10
Ta=25℃
-600
Ta=100 ℃
-400
-200
-0
-0.1
-1
-10
-100
COLLECTOR CURREMT
IC
-1000
——
IC
Ta=100 ℃
Ta=25℃
-10
-1
-0.1
-1000
-1
-10
-100
COLLECTOR CURREMT
(mA)
VBE
fT
500
-1000
(mA)
IC
Ta=25℃
TRANSITION FREQUENCY
-10
T =2
5℃
a
COLLECTOR CURRENT
IC
T =1
00℃
a
fT
-100
——
IC
COMMON EMITTER
VCE= -10V
(MHz)
COMMON EMITTER
VCE=-10V
(mA)
-100
-1
-0.1
-0
-200
-400
-600
-800
100
10
-1000
-5
-20
1000
Cob/Cib
——
VCB/VEB
100
C
(pF)
COLLECTOR POWER DISSIPATION
PC (mW)
Ta=25 ℃
Cib
CAPACITANCE
-60
PC
875
f=1MHz
IE=0/IC=0
Cob
10
1
-0.1
-40
-80
COLLECTOR CURRENT
BASE-EMMITER VOLTAGE VBE (mV)
——
IC
-100
(mA)
Ta
750
625
500
375
250
125
0
-1
www.BDTIC.com/jcst
REVERSE VOLTAGE
-10
V
(V)
-30
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150