Download TO-252 Plastic-Encapsulate Transistors 2SB1261

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252 Plastic-Encapsulate Transistors
2SB1261
TRANSISTOR (PNP)
TO – 252
FEATURES
z Low VCE(sat)
z High DC Current Gain
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current
-3
A
PC
Collector Power Dissipation
1
W
BDTIC
Thermal Resistance From Junction To Ambient
125
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=-100µA,IE=0
-60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-1mA,IB=0
-60
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-100µA,IC=0
-7
V
Collector cut-off current
ICBO
VCB=-60V,IE=0
-10
μA
Emitter cut-off current
IEBO
VEB=-7V,IC=0
-10
μA
DC current gain
hFE(1)*
VCE=-2V, IC=-0.2A
60
*
hFE(2)
VCE=-2V, IC=-0.6A
100
VCE=-2V, IC=-2A
50
hFE(3)*
400
Collector-emitter saturation voltage
VCE(sat)
*
IC=-1.5A,IB=-0.15A
-0.3
V
Base-emitter saturation voltage
*
VBE(sat)
IC=-1.5A,IB=-0.15A
-1.2
V
Cob
Collector output capacitance
fT
Transition frequency
VCB=-10V,IE=0, f=1MHz
40
pF
VCE=-5V,IC=-1.5A
50
MHz
*Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%.
CLASSIFICATION OF hFE(2)
RANK
M
L
K
RANGE
100-200
160-320
200-400
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Typical Characteristics
Static Characteristic
COLLECTOR CURRENT
IC
-4.0mA
DC CURRENT GAIN
(mA)
-4.5mA
-3.5mA
-3.0mA
-400
——
IC
COMMON EMITTER
VCE= -2V
COMMON
EMITTER
Ta=25 ℃
-5.0mA
-600
hFE
1000
hFE
-800
2SB1261
-2.5mA
-2.0mA
Ta=100℃
Ta=25℃
100
-1.5mA
-200
-1.0mA
IB=-0.5mA
-0
10
-0
-1
-2
-3
-4
COLLECTOR-EMITTER VOLTAGE
VCEsat ——
-1000
VCE
-5
-1
-10
(V)
-100
IC
VBEsat ——
-1.2
-3000
-1000
COLLECTOR CURRENT
IC
(mA)
IC
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BDTIC
-100
Ta=100℃
Ta=25℃
-10
-1.0
-0.8
Ta=25℃
-0.6
-0.4
β=10
-1
-1
-10
-100
COLLECTOR CURRENT
IC
——
-1000
IC
- 100
- 10
(mA)
COLLECTOR CURRENT
VBE
Cob / Cib
1000
——
- 1000
IC
-3000
(mA)
VCB / VEB
f=1MHz
IE=0 / IC=0
-1000
Ta=25℃
(pF)
Cib
CAPACITANCE
T =2
a
5℃
-100
C
T=
a 1
00
℃
IC (mA)
β=10
-0.2
- 1
-3000
-3000
COLLECTOR CURRENT
Ta=100℃
-10
Cob
100
COMMON EMITTER
VCE= -2V
-0.4
-0.6
-0.8
BASE-EMITTER VOLTAGE
fT
——
TRANSITION FREQUENCY
-1
-10
REVERSE VOLTAGE
VBE(V)
IC
Pc
1.25
80
fT
(MHz)
100
10
-0.1
-1.0
60
40
20
VCE=-5V
COLLECTOR POWER DISSIPATION
Pc (W)
-1
-0.2
——
V
-20
(V)
Ta
1.00
0.75
0.50
0.25
Ta=25℃
0
-10
0.00
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-30
COLLECTOR CURRENT
-100
IC
(mA)
0
25
50
75
100
AMBIENT TEMPERATURE
125
Ta
(℃ )
150