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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Transistors
2SB1218A
TRANSISTOR (PNP)
FEATURES
SOT–323
 High DC Current Gain
 Complementary to 2SD1819A
APPLICATIONS
 General Purpose Amplification
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
1. BASE
Value
Unit
VCBO
Collector-Base Voltage
-45
V
VCEO
Collector-Emitter Voltage
-45
V
VEBO
Emitter-Base Voltage
-7
V
2. EMITTER
3. COLLECTOR
BDTIC
IC
Collector Current
-100
mA
PC
Collector Power Dissipation
150
mW
Thermal Resistance From Junction To Ambient
833
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55～+150
℃
RΘJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=-10µA, IE=0
-45
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-2mA, IB=0
-45
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-10µA, IC=0
-7
V
Collector cut-off current
ICBO
VCB=-20V, IE=0
-100
nA
Collector cut-off current
ICEO
VCE=-10V, IB=0
-100
µA
Emitter cut-off current
IEBO
VEB=-5V, IC=0
-100
nA
DC current gain
hFE
VCE=-10V, IC=-2mA
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
VCE(sat)
fT
Cob
160
460
IC=-100mA, IB=-10mA
-0.5
V
VCE=-10V,IE=1mA ,f=200MHz
80
MHz
VCB=-10V, IE=0, f=1MHz
2.7
pF
CLASSIFICATION OF hFE
RANK
Q
R
S
RANGE
160–260
210–340
290–460
MARKING
BQ1
BR1
BS1
A,Oct,2010
www.BDTIC.com/jcst
2SB1218A
Typical Characteristics
Static Characteristic
-12
-30uA
COMMON
EMITTER
Ta=25℃
- 27uA
-21uA
-8
-18uA
-15uA
-6
-12uA
-4
-9uA
——
IC
Ta=100℃
hFE
-24uA
DC CURRENT GAIN
COLLECTOR CURRENT
IC
(mA)
-10
hFE
1000
Ta=25℃
300
-6uA
-2
COMMON EMITTER
VCE= -10V
IB=-3uA
100
-0
-0
-2
-4
-6
-8
-10
-12
COLLECTOR-EMITTER VOLTAGE
VCEsat
-1000
——
-14
-16
-1
VCE (V)
-10
-100
COLLECTOR CURRENT
IC
VBEsat ——
-1200
IC
(mA)
IC
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BDTIC
-100
Ta=100 ℃
Ta=25℃
-10
β=10
-1
-0.3
-1
-10
COLLECTOR CURREMT
IC
-100
——
IC
-900
Ta=25℃
-600
Ta=100 ℃
-300
-0.1
-100
(mA)
β=10
-1
COLLECTOR CURREMT
Cob/Cib
VBE
-10
——
20
IC
-100
(mA)
VCB/VEB
Ta=25 ℃
Cib
Cob
CAPACITANCE
T =2
5℃
a
T=
a 10
0℃
COLLECTOR CURRENT
-10
10
C
IC
(pF)
(mA)
f=1MHz
IE=0/IC=0
-1
COMMON EMITTER
VCE= -10V
-0.1
-0
-300
-600
-900
-1200
BESE-EMMITER VOLTAGE VBE (mV)
PC
COLLECTOR POWER DISSIPATION
PC (mW)
175
——
1
-0.1
-1
REVERSE VOLTAGE
Ta
150
125
100
75
50
25
0
0
25
50
www.BDTIC.com/jcst
75
AMBIENT TEMPERATURE
100
Ta
(℃ )
125
150
-10
V
(V)
-20
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