Download SOT-23 Plastic-Encapsulate Transistors 2SB1198

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
SOT-23
2SB1198
TRANSISTOR (PNP)
FEATURES
Low VCE(sat)
z
High breakdown voltage
1. BASE
2. EMITTER
3. COLLECTOR
z
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
BDTIC
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-80
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-500
mA
Collector Power Dissipation
200
mW
Junction Temperature
150
℃
Storage Temperature
-55-150
℃
PC
TJ
Tstg
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
IC=-50μA, IE=0
=
V(BR)CEO IC=-2mA, IB 0
V(BR)EBO
IE=-50μA, IC=0
MIN
TYP
hFE(1)
DC current gain
Collector-emitter saturation voltage
VCE=-3V,
=
IC -100mA
-80
V
-5
V
120
VCB=-10V, IE=0, f=1MHz
Range
MARKING
Q
-0.5
μA
V
180
MHz
11
pF
R
120-270
180-390
AKQ
AKR
www.BDTIC.com/jcst
μA
-0.5
CLASSIFICATION OF hFE(1)
Rank
-0.5
390
VCE=-10V, IC=-50mA, f=100MHz
Cob
UNIT
V
IC=-500mA, IB -50mA
VCE(sat)=
fT
MAX
-80
=
VEB=-4V, IC 0
IEBO
Emitter cut-off current
Collector output capacitance
conditions
=
VCB=-50V, IE 0
ICBO
Collector cut-off current
Transition frequency
V(BR)CBO
Test