Download TO-92 Plastic-Encapsulate Transistors 2SA950

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SA950
TRANSISTOR (PNP)
TO-92
FEATURES
y 1W Output Applications
y Complementary to 2SC2120
1.EMITTER
2. COLLECTOR
MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)
Symbol
Parameter
Value
3. BASE
Unit
BDTIC
VCBO
Collector-Base Voltage
-35
V
VCEO
Collector-Emitter Voltage
-30
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-0.8
A
PC
Collector Power Dissipation
0.6
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55 to +150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Symbol
Parameter
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= -0.1mA , IE=0
-35
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= -10mA , IB=0
-30
V
Emitter-base breakdown voltage
V(BR)EBO
IE= -0.1mA, IC=0
-5
V
Collector cut-off current
ICBO
VCB= -35V, IE=0
-0.1
μA
Emitter cut-off current
IEBO
VEB= -5V, IC=0
-0.1
μA
hFE(1)
VCE=-1V, IC=-100mA
100
hFE(2)
VCE=-1V, IC= -700mA
35
320
DC current gain
VCE(sat)
Collector-emitter saturation voltage
Emitter-base voltage
VBE
Collector Output Capacitance
Cob
fT
Transition frequency
IC= -500mA, IB= -20mA
VCE=-1V, IC=-10mA
-0.5
VCB=-10V,IE=0
f=1MHz
VCE=-5V,IC=-10mA
Range
-0.8
V
pF
120
MHz
O
Y
100-200
160-320
www.BDTIC.com/jcst
V
19
CLASSIFICATION OF hFE(1)
Rank
-0.7
Typical Characterisitics
Static Characteristic
IC
——
Ta=100℃
hFE
-1.0mA
-200
-0.9mA
-0.8mA
DC CURRENT GAIN
COLLECTOR CURRENT
hFE
1000
COMMON EMITTER
Ta=25℃
IC
(mA)
-250
2SA950
-0.7mA
-150
-0.6mA
-0.5mA
-100
-0.4mA
-0.3mA
-50
Ta=25℃
100
-0.2mA
COMMON EMITTER
VCE=-1V
IB=-0.1mA
-0
-0.0
10
-0.5
-1.0
-1.5
-2.0
COLLECTOR-EMITTER VOLTAGE
VBEsat
——
VCE
-2.5
-1
-10
-100
COLLECTOR CURRENT
(V)
IC
VCEsat
-1000
-2000
IC
-800
(mA)
IC
——
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BASE-EMITTER SATURATION
VOLTAGE VBE(sat) (mV)
BDTIC
-1000
Ta=25℃
Ta=100℃
β=25
-100
-1
-10
COLLECTOR CURRENT
IC
——
IC
β=25
-10
(mA)
fT
VBE
IC
(mA)
IC
——
1000
(MHz)
fT
-100
TRANSITION FREQUENCY
T =2
5℃
a
T =1
00℃
a
100
-10
COMMON EMITTER
VCE=-1V
-1
-0.0
10
VCE= -5V
Ta=25℃
1
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-10
-2
COLLECTOR CURRENT
BASE-EMMITER VOLTAGE VBE (V)
Cob/ Cib
——
VCB/ VEB
COLLECTOR POWER DISSIPATION
PC (mW)
f=1MHz
IE=0/IC=0
Cib
(pF)
Ta=25℃
C
Cob
10
1
-0.1
PC
700
100
CAPACITANCE
-800
-100
COLLECTOR CURRENT
(mA)
IC
Ta=25℃
-1
-800
COLLECTOR CURRENT
Ta=100℃
-10
-800
-100
-100
-1
-10
V
(V)
-20
-100
(mA)
Ta
600
500
400
300
200
100
0
www.BDTIC.com/jcst
REVERSE VOLTAGE
——
IC
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
150
(℃ )
B,Nov,2011