Download TO-92 Plastic-Encapsulate Transistors 2SA836

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
2SA836
TRANSISTOR (PNP)
1. EMITTER
2. COLLECTOR
FEATURES
z High DC Current Gain
z Low Frequency Amplifier
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
BDTIC
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-55
V
VCEO
Collector-Emitter Voltage
-55
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current
-0.1
A
PC
Collector Power Dissipation
200
mW
Thermal Resistance From Junction To Ambient
625
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= -0.01mA,IE=0
-55
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-1mA,IB=0
-55
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-0.01mA,IC=0
-5
V
VCB=-18V,IE=0
-0.1
μA
-0.05
μA
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
VEB=-2V,IC=0
DC current gain
hFE
VCE=-12V, IC=-2mA
VCE(sat)
IC=-10mA,IB=-1mA
-0.5
V
Base-emitter voltage
VBE
VCE=-12V, IC=-2mA
-0.75
V
Collector output capacitance
Cob
VCB=-10V,IE=0, f=1MHz
4
pF
Collector-emitter saturation voltage
fT
Transition frequency
VCE=-12V,IC=-2mA
160
500
150
MHz
CLASSIFICATION OF hFE
RANK
C
D
RANGE
160-320
250-500
www.BDTIC.com/jcst
Typical Characteristics
2SA836
Static Characteristic
-8
COMMON
EMITTER
Ta=25℃
——
IC
-20uA
-18uA
hFE
1000
-16uA
-14uA
Ta=100℃
IC
-6
DC CURRENT GAIN
-7
(mA)
hFE
3000
COLLECTOR CURRENT
-5
-12uA
-4
-10uA
-3
-8uA
-6uA
-2
Ta=25℃
100
-4uA
-1
COMMON EMITTER
VCE= -12V
IB=-2uA
-0
10
-0
-2
-4
-6
-8
-10
COLLECTOR-EMITTER VOLTAGE
VBEsat ——
-1000
-12
-14
-1
-10
COLLECTOR CURRENT
VCE (V)
IC
VCEsat
-1000
——
IC
-100
(mA)
IC
BDTIC
β=10
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
-800
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
β=10
Ta=25℃
-600
Ta=100 ℃
-400
-200
-0
-0.1
-1
-10
COLLECTOR CURREMT
IC
-100
——
IC
Ta=100 ℃
-100
Ta=25℃
-10
-0.1
-100
-1
-10
COLLECTOR CURREMT
(mA)
VBE
fT
500
IC
Ta=25℃
TRANSITION FREQUENCY
T =2
5℃
a
-10
T =1
00℃
a
COLLECTOR CURRENT
IC
fT
(mA)
——
-100
(mA)
COMMON EMITTER
VCE=-12V
(MHz)
COMMON EMITTER
VCE=-12V
IC
-1
-0.1
-200
-400
-600
-800
100
10
-0.3
-1000
-2
Cob/Cib
——
50
VCB/VEB
COLLECTOR POWER DISSIPATION
PC (mW)
Cib
CAPACITANCE
C
(pF)
Ta=25 ℃
Cob
1
-0.1
-6
PC
300
f=1MHz
IE=0/IC=0
10
-4
-8
COLLECTOR CURRENT
BASE-EMMITER VOLTAGE VBE (mV)
——
IC
-10
(mA)
Ta
200
100
0
-1
www.BDTIC.com/jcst
REVERSE VOLTAGE
-10
V
(V)
-30
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150