Download TO-92 Plastic-Encapsulate Transistors 2SA673

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
2SA673
TRANSISTOR (PNP)
1. EMITTER
FEATURES
z Low Frequency Amplifier
z Complementary Pair with 2SC1213
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
BDTIC
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-35
V
VCEO
Collector-Emitter Voltage
-35
V
-4
V
IC
Collector Current
Emitter-Base Voltage
-0.5
A
PC
Collector Power Dissipation
400
mW
Thermal Resistance From Junction To Ambient
312
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
VEBO
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=-0.01mA,IE=0
-35
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-1mA,IB=0
-35
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-0.01mA,IC=0
-4
V
Collector cut-off current
Emitter cut-off current
DC current gain
ICBO
VCB=-20V,IE=0
IEBO
VEB=-3V,IC=0
hFE(1)
VCE=-3V, IC=-10mA
60
hFE(2)
VCE=-3V, IC=-500mA
10
*
VCE(sat)
IC=-150mA,IB=-15mA
-0.6
V
VCE=-3V, IC=-10mA
-0.75
V
*
Collector-emitter saturation voltage
VBE
Base-emitter voltage
-0.5
μA
-0.5
μA
320
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
CLASSIFICATION OF hFE(1)
RANK
RANGE
B
C
D
60-120
100-200
160-320
A,Dec,2010
www.BDTIC.com/jcst