Download TO-92L Plastic-Encapsulate Transistors 2SA684

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
2SA684
TRANSISTOR (PNP)
TO-92L
FEATURES
1. EMITTER
Automatic Insertion by Radial Taping Possible
2. COLLECTOR
Complementary Pair with 2SC1384
3. BASE
BDTIC
MAXIMUM RATINGS(Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-1
A
Collector Power Dissipation
0.75
W
Junction Temperature
150
℃
Storage Temperature
-55-150
℃
PC
TJ
Tstg
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=-10uA, IE=0
-60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-2mA, IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-10μA, IC=0
-5
V
ICBO
VCB=-20V, IE=0
hFE(1)
VCE=-10V, IC=-500mA
85
hFE(2)
VCE=-5V, IC=-1A
50
Collector cut-off current
DC current gain
-0.1
μA
340
Collector-emitter saturation voltage
VCE(sat)
IC=-500mA, IB=-50mA
-0.2
-0.4
V
Base-emitter saturation voltage
VBE(sat)
IC=-500mA, IB=-50mA
-0.85
-1.2
V
fT
Transition frequency
Cob
Collector output capacitance
CLASSIFICATION OF
Rank
Range
VCE=-10V, IE=50mA, f=200MHz
200
VCB=-10V, IE=0, f=1MHz
20
MHz
30
hFE(1)
Q
R
S
85-170
120-240
170-340
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pF
Typical Characteristics
2SA684
Static Characteristic
COMMON EMITTER
Ta=25℃
-5.4mA
-4.8mA
-4.2mA
-800
hFE
600
-3.6muA
-3.0mA
-600
VCE= -10V
DC CURRENT GAIN
-1000
IC
——
COMMON EMITTER
VCE= -10V/-5V
800
-6.0mA
IC
(mA)
-1200
COLLECTOR CURRENT
hFE
1000
-1300
-2.4mA
-1.8mA
-400
-1.2mA
400
Ta=100℃
Ta=25℃
200
VCE= -5V
-200
IB=-0.6mA
-0
-0
-2
-4
-6
-8
-10
-12
COLLECTOR-EMITTER VOLTAGE
VBEsat ——
-1200
-14
-16
100
-1
-18
-10
VCE (V)
-100
COLLECTOR CURRENT
IC
VCEsat
-1000
IC
——
-1000
(mA)
IC
BDTIC
β=10
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
β=10
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
-900
Ta=25℃
-600
Ta=100 ℃
Ta=100 ℃
-100
Ta=25℃
-10
-300
-0.4
-1
-10
-100
COLLECTOR CURREMT
IC
-1000
——
IC
-1000
(mA)
IC
COMMON EMITTER
VCE=-10V
Ta=25℃
TRANSITION FREQUENCY
-10
T =2
5℃
a
T=
a 10
0℃
IC
fT
-100
-1
-400
-600
-800
100
10
-2.2
-1000
-10
BASE-EMMITER VOLTAGE VBE (mV)
Cob/Cib
1000
——
COLLECTOR POWER DISSIPATION
PC (mW)
Cib
Cob
10
1
-0.5
PC
900
Ta=25 ℃
100
-100
COLLECTOR CURRENT
VCB/VEB
f=1MHz
IE=0/IC=0
C (pF)
——
IC
500
-0.1
-200
CAPACITANCE
-100
fT
VBE
(MHz)
(mA)
-10
COLLECTOR CURREMT
(mA)
COMMON EMITTER
VCE=-10V
COLLECTOR CURRENT
-1
-1000
——
IC
(mA)
Ta
750
600
450
300
150
0
-1
www.BDTIC.com/jcst
-10
REVERSE VOLTAGE
V
(V)
-35
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150