Download SOT-23 Plastic-Encapsulate Transistors 2SA812

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
2SA812
SOT-23
TRANSISTOR (PNP)
Unit : mm
1. BASE
FEATURES
z
Complementary to 2SC1623
z
High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA)
z
High Voltage: Vceo=-50V
2. EMITTER
3. COLLECTOR
BDTIC
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector- Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-100
mA
Collector Power Dissipation
200
mW
Junction Temperature
150
℃
Storage Temperature
-55-150
℃
PC
TJ
Tstg
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Symbol
Test conditions
Min
Collector-base breakdown voltage
V(BR)CBO
IC=-100μA, IE=0
-60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= -1mA, IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO
IE= -100μA, IC=0
-5
V
Collector cut-off current
ICBO
VCB=- 60 V, IE=0
-0.1
μA
Emitter cut-off current
IEBO
VEB= -5V, IC=0
-0.1
μA
DC current gain
hFE
VCE=- 6V, IC= -1mA
Parameter
Collector-emitter saturation voltage
VCE(sat)
Base-emitter voltage
VBE
Transition frequency
fT
Cob
Collector output capacitance
Typ
90
VCE=-6V,
-0.58
IC= -10mA
VCB=-10V,IE=0,f=1MHz
-0.3
V
-0.68
V
180
MHz
4.5
pF
CLASSIFICATION OF hFE
Rank
Range
Marking
M4
M5
M6
M7
90-180
135-270
200-400
300-600
M4
M5
M6
M7
www.BDTIC.com/jcst
Unit
600
IC=-100mA, IB= -10mA
IC=-1mA, VCE=-6V
Max
Typical Characterisitics
2SA812
hFE
Static Characteristic
-4
IC
500
o
-8.1uA
DC CURRENT GAIN
400
-7.2uA
-6.3uA
-2
-5.4uA
-4.5uA
-3.6uA
-1
Ta=100 C
hFE
-9uA
-3
IC
(mA)
COMMON EMITTER
Ta=25℃
COLLECTOR CURRENT
——
600
300
o
Ta=25 C
200
-2.7uA
100
-1.8uA
COMMON EMITTER
VCE=-6V
IB=-0.9uA
-0
0
-0
-2
-4
-6
COLLECTOR-EMITTER VOLTAGE
VCEsat
——
VCE
-8
-1
-10
-100
COLLECTOR CURRENT
(V)
IC
VBEsat
——
IC
(mA)
IC
-1000
-200
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BDTIC
-100
Ta=100℃
Ta=25℃
-800
Ta=25℃
-600
Ta=100℃
β=10
β=10
-10
-400
-1
-10
-100
COLLECTOR CURRENT
IC
IC
-1
-10
(mA)
-100
COLLECTOR CURRENT
—— VBE
fT
-100
IC
(mA)
—— IC
1000
-10
Ta=100℃
TRANSITION FREQUENCY
COLLCETOR CURRENT
IC
fT
(mA)
(MHz)
COMMON EMITTER
VCE=-6V
Ta=25℃
100
COMMON EMITTER
VCE=-6V
o
Ta=25 C
-1
-400
10
-600
-800
BASE-EMMITER VOLTAGE
Cob/ Cib
——
VBE
-1000
-1
-10
-100
COLLECTOR CURRENT
(mV)
VCB/ VEB
Pc
——
IC
(mA)
Ta
250
20
f=1MHz
IE=0/ IC=0
COLLECTOR POWER DISSIPATION
Pc (mW)
o
Ta=25 C
(pF)
10
CAPACITANCE
C
Cib
Cob
1
-0.1
200
150
100
50
0
-1
www.BDTIC.com/jcst
REVERSE VOLTAGE
-10
V
(V)
-20
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
150
(℃)
B,Oct,2011