Download SOT-523 Plastic-Encapsulate Transistors 2SA1774

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate Transistors
2SA1774
SOT-523
TRANSISTOR (PNP)
FEATURES
z
Reduces Board Space
z
High hFE
z
Low VCE(sat)
1. BASE
2. EMTTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
BDTIC
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current -Continuous
-150
mA
Collector Power Dissipation
150
mW
Junction Temperature
150
℃
Storage Temperature
-55-150
℃
PC
TJ
Tstg
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=-50uA, IE=0
-60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-1.0mA, IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-50μA, IC=0
-6.0
V
Collector cut-off current
ICBO
VCB=-60V, IE=0
-0.1
uA
Emitter cut-off current
IEBO
VEB=-6V, IC=0
-0.1
μA
DC current gain
hFE
(1)
VCE=-6.0V, IC=-1.0mA
(2)
Collector-emitter saturation voltage
VCE(sat)
Base-emitter saturation voltage
VBE(sat)
(2)
fT
Transition frequency
Collector output capacitance
Cob
120
560
IC=-50mA, IB=-5.0mA
-0.5
V
IC=-50mA, IB=-5.0mA
-1.2
V
VCE=-12V, IC=-2.0mA,f=30MHZ
140
VCB=-12V, IE=0, f=1MHz
3.5
MHz
5
Note(1):
CLASSIFICATION OF hFE
Rank
Range
Marking
Q
R
S
120-270
180-390
270-560
FQ
FR
(2).Pulse Test :Pulse Width ≤300us,D.C ≤ 2%
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FS
pF
Typical Characteristics
Static Characteristic
-500uA
-450uA
-400uA
-80
COMMON
EMITTER
Ta=25 ℃
-350uA
IC
IC
COMMON EMITTER
VCE=-6V
Ta=100 ℃
400
DC CURRENT GAIN
-250uA
-60
——
500
-300uA
COLLECTOR CURRENT
hFE
600
hFE
(mA)
-100
2SA1774
-200uA
-40
-150uA
-100uA
300
Ta=25 ℃
200
-20
IB=-50uA
100
-0.3
-0
-0
-2
-4
-6
-8
COLLECTOR-EMITTER VOLTAGE
VCEsat
-1000
——
VCE
-10
-3
-1
(V)
-30
-10
COLLECTOR CURRENT
IC
VBEsat
-1000
IC
-100
-200
(mA)
—— IC
BASE-EMMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR-EMMITTER SATURATION
VOLTAGE VCEsat (mV)
BDTIC
-300
-100
Ta=100 ℃
-30
Ta=25 ℃
-10
-3
Ta=25 ℃
Ta=100 ℃
-500
β=10
-1
-0.1
-1
-0.3
COLLECTOR CURRENT
IC
——
IC
β=10
-300
-0.1
-200
-1
-0.3
(mA)
-10
-3
COLLECTOR CURRENT
VBE
Cob/ Cib
30
VCE=-6V
——
-30
IC
-100
-200
(mA)
VCB/ VEB
f=1MHz
IE=0/IC=0
Ta=25℃
(pF)
Ta=100 ℃
CAPACITANCE
-3
Ta=25 ℃
-1
10
Cib
Cob
3
-0.3
-0.1
-0.2
-0.4
-0.6
-0.8
BASE-EMITTER VOLTAGE
Pc
200
COLLECTOR POWER DISSIPATION
Pc (mW)
-100
C
(mA)
-10
COLLECTOR CURRENT
-30
IC
-100
-30
-10
-3
——
VBE
-1.0
(V)
1
-0.1
-1
-3
REVERSE VOLTAGE
V
-0.3
Ta
150
100
50
0
0
25
50
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75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
-10
(V)
-20