Download TO-126C Plastic-Encapsulate Transistors 2SA1627

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126C Plastic-Encapsulate Transistors
2SA1627
TRANSISTOR (PNP)
TO – 126C
FEATURES
z High Voltage
z High Speed Switching
z Low Collector Saturation Voltage
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Value
Unit
-600
V
BDTIC
-600
V
Emitter-Base Voltage
-7
V
IC
Collector Current
-1
A
PC
Collector Power Dissipation
1.25
W
Thermal Resistance From Junction To Ambient
100
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
T est
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=-100µA,IE=0
-600
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-1mA,IB=0
-600
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-100µA,IC=0
-7
V
Collector cut-off current
ICBO
VCB=-600V,IE=0
-10
μA
Emitter cut-off current
IEBO
VEB=-7V,IC=0
-10
μA
*
hFE(1)
DC current gain
*
hFE(2)
VCE=-5V, IC=-0.1A
30
VCE=-5V, IC=-0.5A
5
120
Collector-emitter saturation voltage
VCE(sat)
*
IC=-0.3A,IB=-0.06A
-0.5
V
Base-emitter saturation voltage
*
VBE(sat)
IC=-0.3A,IB=-0.06A
-1.2
V
Collector output capacitance
Cob
Transition frequency
fT
50
VCB=-10V,IE=0, f=1MHz
VCE=-10V,IC=-0.1A
10
pF
MHz
*Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%.
CLASSIFICATION OF hFE(1)
RANK
M
L
K
RANGE
30-60
40-80
60-120
www.BDTIC.com/jcst
B,Aug,2012