Download SOT-323 Plastic-Encapsulate Transistors 2SA1611

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Transistors
2SA1611 TRANSISTOR (PNP)
FEATURES
SOT–323
 High DC Current Gain
 High Voltage
 Complementary to 2SC4177
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
1. BASE
VCBO
Collector-Base Voltage
-60
V
2. EMITTER
VCEO
Collector-Emitter Voltage
-50
V
3. COLLECTOR
VEBO
Emitter-Base Voltage
-5
V
BDTIC
IC
Collector Current
-100
mA
PC
Collector Power Dissipation
150
mW
Thermal Resistance From Junction To Ambient
833
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55～+150
℃
RΘJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=-100µA, IE=0
-60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-1mA, IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-100µA, IC=0
-5
V
Collector cut-off current
ICBO
VCB=-60V, IE=0
-100
nA
Emitter cut-off current
IEBO
VEB=-5V, IC=0
-100
nA
DC current gain
hFE*
VCE=-6V, IC=-1mA
Collector-emitter saturation voltage
Collector-emitter voltage
Transition frequency
Collector output capacitance
VCE(sat)
90
600
IC=-100mA, IB=-10mA
V
-0.68
V
VBE
VCE=-6V, IC=-1mA
fT
VCE=-6V,Ic=-10mA
180
MHz
VCB=-10V, IE=0, f=1MHz
4.5
pF
Cob
-0.58
-0.3
*Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%.
CLASSIFICATION OF hFE
RANK
M4
M5
M6
M7
RANGE
90–180
135–270
200–400
300–600
MARKING
M4
M5
M6
M7
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Typical Characterisitics
Static Characteristic
-16uA
-14uA
-12uA
-10uA
-8uA
-6uA
-1
IC
Ta=100℃
hFE
-18uA
-2
——
COMMON EMITTER
VCE=-6V
COMMON
EMITTER
Ta=25℃
DC CURRENT GAIN
COLLECTOR CURRENT
hFE
300
-20uA
-3
IC
(mA)
-4
2SA1611
200
Ta=25℃
100
-4uA
IB=-2uA
0
-0.1
-0
-0
-2
-4
-6
-8
COLLECTOR-EMITTER VOLTAGE
VCEsat
-500
——
VCE
-10
-3
-1
-0.3
-10
COLLECTOR CURRENT
(V)
IC
VBEsat
-1.2
IC
-100
-30
(mA)
IC
——
BDTIC
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
-300
-100
Ta=100℃
Ta=25℃
-30
-0.8
Ta=25℃
Ta=100℃
-0.4
β=10
β=10
-10
-0.3
-3
-1
COLLECTOR CURRENT
IC
-100
-30
-10
IC
-0.0
-0.2
-100
-3
-1
-0.5
(mA)
-10
COLLECTOR CURRENT
—— VBE
Cob/ Cib
20
——
IC
(mA)
VCB/ VEB
f=1MHz
IE=0/IC=0
Cib
(pF)
10
Ta=100℃
Cob
C
-3
Ta=25℃
-1
3
-0.3
-0.1
-0.2
-0.4
-0.6
-0.8
1
-0.1
-1.0
fT
300
—— IC
-1
-3
REVERSE VOLTAGE
V
-0.3
BASE-EMMITER VOLTAGE VBE (V)
PC
200
-10
-20
(V)
—— Ta
VCE=-6V
COLLECTOR POWER DISSIPATION
PC (mW)
(MHz)
Ta=25℃
fT
TRANSITION FREQUENCY
Ta=25℃
-30
CAPACITANCE
COLLECTOR CURRENT
IC
(mA)
COMMON EMITTER
VCE=-6V
-10
-100
-30
200
100
-1
-3
150
100
50
0
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-30
-10
COLLECTOR CURRENT
IC
(mA)
-100
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150