Download SOT-323 Plastic-Encapsulate Transistors 2SA1586

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Transistors
2SA1586 TRANSISTOR (PNP)
FEATURES
SOT–323
 High DC Current Gain
 High Voltage and High Current.
 Complementary to 2SC4116
 Small Package
APPLICATIONS
 General Purpose Amplification.
1. BASE
2. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
3. COLLECTOR
BDTIC
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-50
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current
-150
mA
PC
Collector Power Dissipation
100
mW
Thermal Resistance From Junction To Ambient
1250
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55～+150
℃
RΘJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=-100µA, IE=0
-50
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-1mA, IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-100µA, IC=0
-5
V
Collector cut-off current
ICBO
VCB=-50V, IE=0
-100
nA
Emitter cut-off current
IEBO
VEB=-5V, IC=0
-100
nA
DC current gain
hFE
VCE=-6V, IC=-2mA
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
VCE(sat)
fT
Cob
70
400
IC=-100mA, IB=-10mA
VCE=-10V,Ic=-1mA
-0.3
80
MHz
VCB=-10V, IE=0, f=1MHz
7
CLASSIFICATION OF hFE
RANK
O
Y
GR(G)
RANGE
70–140
120–240
200–400
MARKING
SO
SY
SG
www.BDTIC.com/jcst
V
pF
Typical Characteristics
Static Characteristic
-35uA
-6
-30uA
-25uA
-4
-20uA
——
IC
Ta=100℃
300
DC CURRENT GAIN
-40uA
hFE
COMMON
EMITTER
Ta=25℃
-45uA
-8
hFE
1000
-50uA
IC
(mA)
-10
COLLECTOR CURRENT
2SA1586
Ta=25℃
100
-15uA
30
-2
-10uA
COMMON EMITTER
VCE= -6V
IB=-5uA
-0
-0
-4
-8
-12
-16
COLLECTOR-EMITTER VOLTAGE
VCEsat
-1000
——
10
-0.1
-20
-1
-0.3
VCE (V)
IC
VBEsat ——
-1200
-30
-10
-3
COLLECTOR CURRENT
IC
-100 -150
(mA)
IC
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BDTIC
-300
-100
Ta=100 ℃
Ta=25℃
-30
-10
-0.1
β=10
-0.3
-3
-1
COLLECTOR CURREMT
IC
-150
-100
——
-30
-10
IC
-900
Ta=25℃
-600
Ta=100 ℃
-300
-0.1
-100 -150
β=10
(mA)
-3
-1
-0.3
COLLECTOR CURREMT
fT
VBE
-30
-10
IC
-100 -150
(mA)
IC
——
500
(MHz)
(mA)
300
-3
T =2
5℃
a
T=
a 10
0℃
COLLECTOR CURRENT
-10
TRANSITION FREQUENCY
fT
IC
-30
-1
-0.3
COMMON EMITTER
VCE= -6V
100
30
COMMON EMITTER
VCE=-10V
Ta=25℃
-0.1
10
-0
-300
-600
-900
-1200
-3
-1
BASE-EMMITER VOLTAGE VBE (mV)
Cob/Cib
——
VCB/VEB
COLLECTOR POWER DISSIPATION
PC (mW)
f=1MHz
IE=0/IC=0
(pF)
Ta=25 ℃
CAPACITANCE
C
Cib
Cob
3
1
-0.1
-0.3
-1
PC
120
30
10
-10
-10
-3
V
(V)
-20
IC
(mA)
Ta
100
80
60
40
20
0
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REVERSE VOLTAGE
——
-100
-30
COLLECTOR CURRENT
0
25
50
75
100
AMBIENT TEMPERATURE
125
Ta
(℃ )
150