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Transcript 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate Transistors
2SA1615
TRANSISTOR (PNP)
TO-252-2L
FEATURES
z Large Current Capacity:
z High hFE and Low Collector Saturation Voltage
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
Parameter
Collector-Base Voltage
Value
Unit
-30
V
BDTIC
VCEO
Collector-Emitter Voltage
-20
V
VEBO
Emitter-Base Voltage
-10
V
IC
Collector Current
-10
A
PC
Collector Power Dissipation
1
W
Thermal Resistance From Junction To Ambient
125
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=-1mA,IE=0
-30
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-10mA,IB=0
-20
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-1mA,IC=0
-10
V
Collector cut-off current
ICBO
VCB=-20V,IE=0
-1
μA
Emitter cut-off current
IEBO
VEB=-8V,IC=0
-1
μA
hFE(1)*
VCE=-2V, IC=-0.5A
200
*
hFE(2)
VCE=-2V, IC=-4A
160
Collector-emitter saturation voltage
*
VCE(sat)
IC=-4A,IB=-0.05A
-0.25
V
Base-emitter saturation voltage
*
VBE(sat)
IC=-4A,IB=-0.05A
-1.2
V
DC current gain
Collector output capacitance
Cob
fT
Transition frequency
600
VCB=-10V,IE=0, f=1MHz
220
pF
VCE=-5V,IC=-1.5A
180
MHz
*Pulse test: pulse width ≤10ms, duty cycle≤ 50%.
CLASSIFICATION OF hFE(1)
RANK
L
K
RANGE
200-400
300-600
A,Dec,2010
www.BDTIC.com/jcst
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