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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Transistors
SOT-323
2SA1579
TRANSISTOR (PNP)
1. BASE
FEATURES
z
High breakdown voltage. (BVCEO = -120V)
z
Complements the 2SC4102
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
BDTIC
Symbol
Parameter
Value
Unit
VCBO
Collector- Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-50
mA
Collector Dissipation
100
mW
Junction Temperature
150
℃
Storage Temperature
-55-150
℃
PC
TJ
Tstg
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=-50μA,IE=0
-120
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-1mA,IB=0
-120
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-50μA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-100V,IE=0
-0.5
μA
Emitter cut-off current
IEBO
VEB=-4V,IC=0
-0.5
μA
DC current gain
hFE
VCE=-6V,IC=-2mA
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
VCE(sat)
fT
Cob
180
560
IC=-10mA,IB=-1mA
-0.5
VCE=-12V,IC=-2mA,f=30MHz
140
MHz
VCB=-12V,IE=0,f=1MHz
3.2
pF
CLASSIFICATION OF hFE
Rank
Range
Marking
V
R
S
180-390
270-560
RR
RS
www.BDTIC.com/jcst
Typical Characteristics
2SA1579
Static Characteristic
-7
COMMON
EMITTER
Ta=25℃
IC
Ta=100℃
-20uA
-18uA
IC
-5
——
hFE
-6
(mA)
hFE
1000
-14uA
-12uA
-3
-10uA
-8uA
-2
Ta=25℃
DC CURRENT GAIN
COLLECTOR CURRENT
-16uA
-4
100
-6uA
COMMON EMITTER
VCE= -6V
-4uA
-1
IB=-2uA
-0
-0
-2
-4
-6
-8
COLLECTOR-EMITTER VOLTAGE
VBEsat ——
-1000
-10
10
-0.1
-12
-1
COLLECTOR CURRENT
VCE (V)
IC
VCEsat
-1000
——
IC
-50
-10
(mA)
IC
BDTIC
β=10
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
β=10
-800
Ta=25℃
-600
Ta=100 ℃
-400
-200
-0.1
-1
-10
COLLECTOR CURREMT
IC
——
IC
Ta=25℃
-10
-0.1
-50
-1
VBE
fT
200
(MHz)
COMMON EMITTER
VCE=-6V
——
IC
(mA)
IC
COMMON EMITTER
VCE=-12V
Ta=25℃
100
TRANSITION FREQUENCY
T =2
5℃
a
T =1
00℃
a
COLLECTOR CURRENT
IC
fT
-10
-50
-10
COLLECTOR CURREMT
(mA)
-50
(mA)
Ta=100 ℃
-100
-1
-0.1
-0
-200
-400
-600
-800
10
-1000
-1
100
Cob/Cib
——
VCB/VEB
COLLECTOR POWER DISSIPATION
PC (mW)
Ta=25 ℃
CAPACITANCE
C
(pF)
Cib
10
1
-0.1
PC
150
f=1MHz
IE=0/IC=0
Cob
-30
-10
COLLECTOR CURRENT
BASE-EMMITER VOLTAGE VBE (mV)
——
IC
(mA)
Ta
100
50
0
-1
www.BDTIC.com/jcst
REVERSE VOLTAGE
-10
V
(V)
-30
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
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