Download TO-92 Plastic-Encapsulate Transistors 2SA1515

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
2SA1515
TRANSISTOR (PNP)
1. EMITTER
2. COLLECTOR
FEATURES
z Low Collector-Emitter Saturation Voltage
z Low Transition Frequency
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
BDTIC
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-32
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current
-1
A
PC
Collector Power Dissipation
500
mW
Thermal Resistance From Junction To Ambient
250
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= -0.05mA,IE=0
-40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-1mA,IB=0
-32
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-0.05mA,IC=0
-5
V
VCB=-20V,IE=0
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
VEB=-4V,IC=0
DC current gain
hFE
VCE=-3V, IC=-0.1A
VCE(sat)
IC=-0.5A,IB=-0.05A
Collector-emitter saturation voltage
Cob
Collector output capacitance
fT
Transition frequency
82
-0.5
μA
-0.5
μA
390
-0.5
V
30
pF
VCB=-10V,IE=0, f=1MHz
VCE=-5V,IC=-50mA
50
MHz
CLASSIFICATION OF hFE
RANK
P
Q
R
RANGE
82-180
120-270
180-390
A,Dec,2010
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