Download SOT-323 Plastic-Encapsulate Transistors 2SA1576A

Survey
yes no Was this document useful for you?
   Thank you for your participation!

* Your assessment is very important for improving the work of artificial intelligence, which forms the content of this project

Document related concepts
no text concepts found
Transcript
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Transistors
SOT-323
2SA1576A
TRANSISTOR (PNP)
1. BASE
FEATURES
z
Excellent hFE linearity
z
Complements the 2SC4081
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)
BDTIC
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current -Continuous
-150
mA
PC
Collector Power Dissipation
200
mW
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25 ℃ unless otherwise specified)
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=-50μA,IE=0
-60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-1mA,IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-50μA,IC=0
-6
V
Collector cut-off current
ICBO
VCB=-60V,IE=0
-0.1
μA
Emitter cut-off current
IEBO
VEB=-6V,IC=0
-0.1
μA
DC current gain
hFE
VCE=-6V,IC=-1mA
VCE(sat)
Collector-emitter saturation voltage
fT
Transition frequency
Cob
Collector output capacitance
120
560
IC=-50mA,IB=-5mA
-0.5
VCE=-12V,IC=-2mA,f=30MHz
VCB=-12V,IE=0,f=1MHz
140
MHz
4
5
CLASSIFICATION OF hFE
Rank
Range
Marking
Q
R
S
120-270
180-390
270-560
FQ
FR
FS
www.BDTIC.com/jcst
V
pF
Typical Characteristics
Static Characteristic
Ta=100℃
hFE
-18uA
-16uA
-5
IC
——
COMMON
EMITTER
Ta=25℃
-20uA
-6
hFE
1000
DC CURRENT GAIN
COLLECTOR CURRENT
IC
(mA)
-7
2SA1576A
-14uA
-4
-12uA
-10uA
-3
-8uA
-6uA
-2
Ta=25℃
100
-4uA
-1
COMMON EMITTER
VCE= -6V
IB=-2uA
-0
10
-0
-2
-4
-6
-8
COLLECTOR-EMITTER VOLTAGE
VCEsat ——
-300
-10
VCE
-12
-1
-10
-100 -150
COLLECTOR CURRENT
(V)
VBEsat ——
IC
IC
(mA)
IC
-1000
BDTIC
β=10
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
β=10
-200
Ta=100℃
-100
Ta=25℃
-0
-1
-10
-100
COLLECTOR CURRENT
Cob / Cib
——
50
IC
Ta=25℃
-600
Ta=100℃
-400
-200
-0.1
-150
-1
-10
COLLECTOR CURRENT
(mA)
VCB / VEB
fT
1000
——
-100 -150
IC
(mA)
IC
(MHz)
f=1MHz
IE=0 / IC=0
10
TRANSITION FREQUENCY
(pF)
fT
Ta=25℃
Cib
CAPACITANCE
C
-800
Cob
100
VCE=-12V
Ta=25℃
1
-0.1
10
-1
-10
REVERSE BIAS VOLTAGE
PC
COLLECTOR POWER DISSIPATION
PC (mW)
250
——
V
-20
-1
Ta
200
150
100
50
0
0
25
50
www.BDTIC.com/jcst
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
-30
-10
COLLECTOR CURRENT
(V)
IC
(mA)
Related documents