Download TO-126C Plastic-Encapsulate Transistors 2SA1357

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126C Plastic-Encapsulate Transistors
2SA1357
TRANSISTOR (PNP)
TO – 126C
FEATURES
z High Collector Current
z Strobe Flash Applications
z Audio Power Amplifier Applications
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
Parameter
Collector-Base Voltage
Value
Unit
-35
V
BDTIC
VCEO
Collector-Emitter Voltage
-20
V
VEBO
Emitter-Base Voltage
-8
V
IC
Collector Current
-5
A
PC
Collector Power Dissipation
1.5
W
Thermal Resistance From Junction To Ambient
83
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= -1mA,IE=0
-35
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-10mA,IB=0
-20
V
Emitter-base breakdown voltage
V(BR)EBO
IE= -1mA,IC=0
-8
V
Collector cut-off current
ICBO
VCB=-35V,IE=0
-100
μA
Emitter cut-off current
IEBO
VEB=-8V,IC=0
-100
μA
hFE(1)
VCE=-2V, IC=-0.5A
100
hFE(2)
VCE=-2V, IC=-4A
70
VCE(sat)
IC=-4A,IB=-0.1A
-1
V
Base-emitter voltage
VBE
VCE=-2V, IC=-4A
-1.5
V
Collector output capacitance
Cob
VCB=-10V,IE=0, f=1MHz
62
pF
VCE=-2V,IC=-0.5A
170
MHz
DC current gain
Collector-emitter saturation voltage
fT
Transition frequency
320
CLASSIFICATION OF hFE(1)
RANK
O
Y
RANGE
100-200
160-320
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Typical Characteristics
Static Characteristic
-1000
IC
hFE
500
-2.4mA
o
DC CURRENT GAIN
(mA)
-2.7mA
-2.1mA
-600
COLLECTOR CURRENT
VCE= -2V
COMMON
EMITTER
Ta=25℃
-3.0mA
-700
hFE —— IC
600
-900
-800
2SA1357
-1.8mA
-500
-1.5mA
-400
-1.2mA
-300
Ta=100 C
400
300
200
-0.9mA
-200
o
Ta=25 C
-0.6mA
-100
100
IB=-0.3mA
-0
0
-0
-1
-2
-3
-4
-5
COLLECTOR-EMITTER VOLTAGE
-6
VCE
-7
-1
VBEsat —— IC
-1.2
-10
-100
COLLECTOR CURRENT
(V)
VCEsat ——
-500
IC
-5000
-1000
(mA)
IC
BDTIC
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
β=40
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
-1.0
-0.8
Ta=25℃
-0.6
-0.4
Ta=100℃
β=40
-400
-300
-200
Ta=100℃
-100
-0.2
Ta=25℃
-0.0
-1
-10
-100
COLLECTOR CURRENT
fT
——
-1
IC
Cob / Cib
1000
-1000
——
IC
-5000
(mA)
VCB / VEB
90
f=1MHz
IE=0 / IC=0
80
Ta=25 C
(pF)
o
Cib
C
70
60
50
40
30
100
Cob
20
VCE=-2V
o
Ta=25 C
0
-10
-20
-30
-40
-50
-60
-70
COLLECTOR CURRENT
VBE ——
IC
-80
-90
10
-0.1
-100
-1
-10
REVERSE VOLTAGE
(mA)
IC
Pc
2.0
COLLECTOR POWER DISSIPATION
Pc (W)
-5000
IC (mA)
-100
COLLECTOR CURRENT
10
COLLECTOR CURRENT
-10
(mA)
CAPACITANCE
TRANSITION FREQUENCY
fT
(MHz)
100
IC
-0
-5000
-1000
-1000
o
Ta=100 C
-100
Ta=25℃
-10
——
V
-20
(V)
Ta
1.5
1.0
0.5
VCE=-2V
-1
-0.2
0.0
-0.4
www.BDTIC.com/jcst
-0.6
BASE-EMITTER VOLTAGE
-0.8
VBE(V)
-1.0
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150