Download SOT-23 Plastic-Encapsulate Transistors 2SA1313

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
2SA1313
SOT-23
TRANSISTOR (PNP)
FEATURES
z
Excellent hFE Linearity
: hFE(2) =25(Min)at VCE =-6V,IC=- 400mA.
z
High Voltage :VCEO=-50V(Min)
z
Complements to the 2SC3325.
1. BASE
2. EMITTER
3. COLLECTOR
MARKING : ACO,ACY
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
BDTIC
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-50
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-500
mA
Collector Power Dissipation
200
mW
Junction Temperature
150
℃
PC
TJ
Tstg
Storage Temperature
℃
-55~+150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=-100μA,IE=0
-50
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-1mA,IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-100μA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-50V,IE=0
-0.1
μA
Emitter cut-off current
IEBO
VEB=-5V,IC=0
-0.1
μA
hFE(1)
VCE=-1V,IC=-100mA
DC current gain
hFE(2)
Collector-emitter saturation voltage
VCE(sat)
VCE=-6V,IC=-400mA
70
O
25
Y
40
240
IC=-100mA,IB=-10mA
-0.25
V
-1
V
Base-emitter voltage
VBE
VCE=-1V,IC=-100mA
Transition frequency
fT
VCE=-6V,IC=-20mA
200
MHz
VCB=-6V,IE=0,f=1MHz
13
pF
Cob
Collector output capacitance
CLASSIFICATION OF
Rank
Range
hFE(1)
O
Y
70-140
120-240
www.BDTIC.com/jcst
Typical Characteristics
Static Characteristic
(mA)
-1mA
VCE= -1V
COMMON
EMITTER
Ta=25℃
-0.9mA
-0.8mA
-150
-0.7mA
DC CURRENT GAIN
IC
-0.6mA
COLLECTOR CURRENT
hFE —— IC
1000
hFE
-200
2SA1313
-0.5mA
-100
-0.4mA
-0.3mA
-50
Ta=100℃
Ta=25℃
100
-0.2mA
IB=-0.1mA
-0
10
-0
-1
-2
-3
-4
-5
COLLECTOR-EMITTER VOLTAGE
VCE
-6
-1
VBEsat —— IC
-1000
-10
COLLECTOR CURRENT
(V)
VCEsat ——
-500
IC
-500
-100
(mA)
IC
BDTIC
β=10
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
β=10
-800
Ta=25℃
Ta=100℃
-600
-400
-200
-0.1
-1
-10
-100
COLLECTOR CURRENT
VBE ——
IC
-400
-300
-200
Ta=100℃
-100
Ta=25℃
-0
-0.1
-500
-1
(mA)
-10
IC
Cob / Cib
100
-500
——
-500
-100
COLLECTOR CURRENT
IC
(mA)
VCB / VEB
Ta=25℃
(pF)
-100
Cib
C
Ta=100℃
CAPACITANCE
COLLECTOR CURRENT
IC (mA)
f=1MHz
IE=0 / IC=0
-10
Ta=25℃
-1
10
Cob
VCE=-1V
-0.1
-200
-400
-600
-800
BASE-EMITTER VOLTAGE
——
IC
TRANSITION FREQUENCY
Pc
250
COLLECTOR POWER DISSIPATION
Pc (mW)
fT
-1
-10
REVERSE VOLTAGE
VBE(mV)
400
fT
(MHz)
450
1
-0.1
-1000
350
300
250
——
V
-20
(V)
Ta
200
150
100
50
VCE=-6V
200
-1
Ta=25℃
0
www.BDTIC.com/jcst
-10
COLLECTOR CURRENT
-100
IC
(mA)
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150