Download SOT-23 Plastic-Encapsulate Transistors 2SA1298

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
2SA1298
TRANSISTOR (PNP)
SOT–23
FEATURES
 Low Frequency Power Amplifier Application
 Power Swithing Applications
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-35
V
VCEO
Collector-Emitter Voltage
-30
V
VEBO
Emitter-Base Voltage
-5
V
1. BASE
2. EMITTER
BDTIC
IC
Collector Current
-800
mA
PC
Collector Power Dissipation
200
mW
Thermal Resistance From Junction To Ambient
625
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55～+150
℃
RΘJA
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=-1mA, IE=0
-35
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-10mA, IB=0
-30
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-1mA, IC=0
-5
V
Collector cut-off current
ICBO
VCB=-30V, IE=0
-0.1
μA
Emitter cut-off current
IEBO
VEB=-5V, IC=0
-0.1
μA
hFE(1)
VCE=-1V, IC=-100mA
100
hFE(2)
VCE=-1V, IC=-800mA
40
DC current gain
Collector-emitter saturation voltage
VCE(sat)
320
IC=-500mA, IB=-20mA
-0.5
-0.4
V
-0.8
V
Base-emitter voltage
VBE
VCE=-1V,IC=-10mA,
Transition frequency
fT
VCE=-5V,IC=-10mA
120
MHz
VCB=-10V, IE=0, f=1MHz
13
pF
Collector output capacitance
Cob
CLASSIFICATION OF hFE(1)
RANK
O
Y
RANGE
100–200
160–320
MARKING
IO
IY
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Typical Characterisitics
2SA1298
hFE
Static Characteristic
-140
-1000
(mA)
-400uA
o
Ta=100 C
-350uA
-100
o
-80
-250uA
-200uA
-60
Ta=25 C
DC CURRENT GAIN
-300uA
COLLECTOR CURRENT
IC
hFE
IC
COMMON
EMITTER
Ta=25℃
-450uA
-120
——
-150uA
-40
-100
-100uA
-20
IB=-50uA
-0
VCE=-1V
-10
-0
-1
-2
-3
-4
COLLECTOR-EMITTER VOLTAGE
VCEsat
-1000
——
VCE
-5
-1
-10
COLLECTOR CURRENT
(V)
IC
VBEsat
-1000
-800
-100
——
IC
(mA)
IC
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BDTIC
Ta=100℃
-100
Ta=25℃
-10
-800
Ta=25℃
Ta=100℃
-600
-400
β=25
β=25
-1
-200
-1
-10
COLLECTOR CURRENT
VBE
Cob/ Cib
100
IC
(mA)
—— VCB/ VEB
Cib
(pF)
C
Ta=100℃
Ta=25℃
-10
-1
Cob
10
f=1MHz
IE=0/ IC=0
o
Ta=25 C
VCE=-1V
-0.1
-0
-200
-400
-600
BASE-EMMITER VOLTAGE
fT
——
-800
VBE
1
-0.1
-1000
IC
PC
250
COLLECTOR POWER DISSIPATION
PC (mW)
fT
VCE=-5V
o
Ta=25 C
-1
-100
IC
(mA)
——
V
-20
(V)
Ta
200
150
100
50
0
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-10
COLLECTOR CURRENT
-10
REVERSE VOLTAGE
100
10
-1
(mV)
(MHz)
1000
TRANSITION FREQUENCY
-800
-100
COLLECTOR CURRENT
IC
——
-10
(mA)
CAPACITANCE
COLLCETOR CURRENT
IC
-1
-100
IC
(mA)
-800
-800
-100
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150