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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate Transistors
2SA1225
TRANSISTOR (PNP)
TO-252-2L
FEATURES
z High Transition Frequency
z Complementary to 2SC2983
1. BASE
2. COLLECTOR
3 .EMITTER
APPLICATIONS
z Power Amplifier Applications
z Driver Stage Amplifier Applications
BDTIC
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-160
V
VCEO
Collector-Emitter Voltage
-160
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current
PC
Collector Power Dissipation
-1.5
A
1
W
Tj
Tstg
Junction Temperature
150
℃
Storage Temperature
-55~150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
V(BR)CBO
*
Collector-emitter breakdown voltage
V (BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
Test
conditions
Min
Typ
Max
Unit
IC=-1mA ,IE=0
-160
V
IC=-10mA, IB=0
-160
V
IE=-1mA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=160V,IE=0
Emitter cut-off current
IEBO
VEB=-5V,IC=0
DC current gain
hFE
VCE=-5V, IC=-0.1A
VCE(sat)
IC=-0.5A,IB=-50mA
-1.5
V
Base-emitter voltage
VBE
VCE=-5V, IC=-0.5A
-1
V
Transition frequency
fT
Collector-emitter saturation voltage
Cob
Collector output capacitance
70
-0.1
μA
-0.1
μA
240
VCE=-10V ,IC=-100mA
100
MHz
VCB=-10V ,IE=0,f=1MHz
30
pF
* Pulse test
CLASSIFICATION OF hFE
Rank
O
Y
Range
70-140
120-240
www.BDTIC.com/jcst
Typical Characteristics
2SA1225
Static Characteristic
(mA)
COMMON
EMITTER
Ta=25℃
-120
-1mA
IC
hFE
-0.7mA
-0.6mA
-0.5mA
-60
-0.4mA
-0.3mA
-30
IC
Ta=100℃
DC CURRENT GAIN
-0.8mA
-90
——
COMMON EMITTER
VCE= -5V
-0.9mA
COLLECTOR CURRENT
hFE
1000
-150
Ta=25℃
100
-0.2mA
IB=-0.1mA
-0
10
-0
-1
-2
-3
-4
-5
COLLECTOR-EMITTER VOLTAGE
VBEsat ——
-1000
-6
-7
-1
-10
IC
-100
COLLECTOR CURRENT
VCE (V)
VCEsat
-500
——
IC
-1000 -1500
(mA)
IC
BDTIC
β=10
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
-800
Ta=25℃
-600
Ta=100 ℃
-400
-200
-0.1
-1
-10
-100
COLLECTOR CURREMT
IC
——
IC
-10
-0.1
-1
VBE
COMMON EMITTER
VCE=-5V
fT
IC
COMMON EMITTER
VCE=-10V
fT
Ta=25℃
-400
-600
-800
10
-85
-1000
-90
Cob/Cib
——
-95
-100
COLLECTOR CURRENT
BASE-EMMITER VOLTAGE VBE (mV)
VCB/VEB
PC
1200
f=1MHz
IE=0/IC=0
——
-105
IC
-110
(mA)
Ta
COLLECTOR POWER DISSIPATION
PC (mW)
1000
Ta=25 ℃
C
(pF)
Cib
CAPACITANCE
(mA)
TRANSITION FREQUENCY
T =2
5℃
a
-1
100
Cob
10
-0.1
——
-1000-1500
-100
IC
100
-10
1000
-10
COLLECTOR CURREMT
(mA)
300
T =1
00℃
a
IC
Ta=25℃
-1000 -1500
-100
-0.1
-200
Ta=100 ℃
-100
(MHz)
(mA)
-1500
-1000
COLLECTOR CURRENT
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
β=10
800
600
400
200
0
-1
www.BDTIC.com/jcst
REVERSE VOLTAGE
-10
V
(V)
-30
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
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